SM3116NSUC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3116NSUC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO251S

Búsqueda de reemplazo de MOSFET SM3116NSUC

SM3116NSUC Datasheet (PDF)

..1. Size:149K sino
sm3116nsuc.pdf

SM3116NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A, RDS(ON)=5.7m (Max.) @ VGS=10V RDS(ON)=8m (Max.) @ VGS=4.5V SDG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-251S (RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS DC/DC Converters.N-Channel MOSFE

5.1. Size:264K sino
sm3116nsu.pdf

SM3116NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=8m (Max.) @ VGS=4.5V Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information

7.1. Size:551K sino
sm3116nau.pdf

SM3116NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Chann

7.2. Size:160K sino
sm3116naf sm3116nafp.pdf

SM3116NAF/SM3116NAFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/58A, RDS(ON)= 5.5m (Max.) @ VGS=10V RDS(ON)= 7.8m (Max.) @ VGS=4.5VS S Reliable and Rugged D DG G Lead Free and Green Devices AvailableTop View of TO-220FPTop View of TO-220(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or

7.3. Size:265K sino
sm3116nbu.pdf

SM3116NBU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: