SM2320NSA Todos los transistores

 

SM2320NSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM2320NSA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 83 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: SOT23
 

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SM2320NSA Datasheet (PDF)

 ..1. Size:257K  sino
sm2320nsa.pdf pdf_icon

SM2320NSA

SM2320NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.3A ,DRDS(ON)=23m (max.) @ VGS=10VRDS(ON)=27m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Comput

 9.1. Size:366K  taiwansemi
tsm2323 a07.pdf pdf_icon

SM2320NSA

TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Chann

 9.2. Size:60K  taiwansemi
tsm2328cx.pdf pdf_icon

SM2320NSA

TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in

 9.3. Size:253K  taiwansemi
tsm2323cx.pdf pdf_icon

SM2320NSA

TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-C

Otros transistores... SM2203NSQG , SM2204NSQG , SM2206NSQG , SM2208NSQG , SM2210NSQG , SM2225NSQG , SM2260NSQG , SM2290NSQG , RU7088R , SM2326NSAN , SM2360NSA , SM2370NSA , SM2404NSAN , SM2416NSAN , SM2430NSAN , SM2501NSU , SM2518NSUC .

 

 
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