SM2326NSAN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM2326NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 70m(max.) @ VGS= 4.5VSRDS(ON)= 90m(max.) @ VGS= 2.5VGRDS(ON)= 110m(max.) @ VGS= 1.8VTop View of SOT-23N Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter SystemsS DC-DC Converter

TSM2323 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 39 @ VGS = -4.5V -4.7 2. Source 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Chann

TSM2328 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 250 @ VGS =10V 1.5 100 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-in

TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 39 @ VGS = -4.5V -4.7 3. Drain -20 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-C

SM2327PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, DRDS(ON)=56m (max.) @ VGS=-10VSRDS(ON)=70m (max.) @ VGS=-4.5VGRDS(ON)=100m (max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in LCD TV, Monitor,SNotebook Computer, Portable Equipment and

SM2329PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.3A, DRDS(ON)= 85m (Max.) @ VGS=-4.5VSRDS(ON)= 120m (Max.) @ VGS=-2.5VGRDS(ON)= 210m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2321PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.3A , DRDS(ON)= 56m (Max.) @ VGS=-10VSRDS(ON)= 68m (Max.) @ VGS=-4.5VG RDS(ON)= 94m (Max.) @ VGS=-2.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powe

SM2328NSANN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A,DRDS(ON)= 40m (max.) @ VGS= 4.5VSRDS(ON)= 55m (max.) @ VGS= 2.5VGRDS(ON)= 85m (max.) @ VGS= 1.8VTop View of Narrow SOT-23 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in DC/AC Inverter Systems.SN-Channel MOSFETOrdering

SM2323PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-2.9A,D RDS(ON) = 108m (max.) @ VGS =-10VS RDS(ON) = 182m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) ESD ProtectionDNote : The diode connected between the gate andsource serves only as protection against ESD. Nogat

SM2320NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.3A ,DRDS(ON)=23m (max.) @ VGS=10VRDS(ON)=27m (max.) @ VGS=4.5VSRDS(ON)=40m (max.) @ VGS=2.5VGRDS(ON)=72m (max.) @ VGS=1.8V ESD Protection Top View of SOT-23-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Comput

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m@VGS=-10VMOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for

SM2323PSAwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2