SM2608NSC Todos los transistores

 

SM2608NSC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2608NSC

Código: C08*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 125 pF

Resistencia drenaje-fuente RDS(on): 0.017 Ohm

Empaquetado / Estuche: SOT23-6

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SM2608NSC Datasheet (PDF)

1.1. sm2608nsc.pdf Size:160K _sino

SM2608NSC
SM2608NSC

SM2608NSC ® N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S D RDS(ON)= 17mΩ(max.) @ VGS=10V D G RDS(ON)= 21.5mΩ(max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

5.1. ssm2602y.pdf Size:169K _upd-mosfet

SM2608NSC
SM2608NSC

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V S D Low on-resistance RDS(ON) 34mΩ D Surface mount package ID 5.3A G D SOT-26 D Description These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance D in an extremely efficient and cost-effective device. The SOT-26 package

5.2. ssm2605gy.pdf Size:207K _upd-mosfet

SM2608NSC
SM2608NSC

SSM2605GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S Fast Switching Characteristic BVDSS -30V D Lower Gate Charge D RDS(ON) 80mΩ Small Footprint & Low Profile Package G ID - 4A D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

 5.3. ssm2602gy.pdf Size:204K _upd-mosfet

SM2608NSC
SM2608NSC

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20V S Lower on-resistance D RDS(ON) 34mΩ D Surface mount package ID 6.3A RoHS Compliant G D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

5.4. ssm2603y.pdf Size:152K _upd-mosfet

SM2608NSC
SM2608NSC

SSM2603Y P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -20V S D Small package outline R 65mΩ DS(ON) D Surface-mount device ID - 4.2A G D SOT-26 D Description D These power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. G The SOT-2

 5.5. ssm2603gy.pdf Size:215K _upd-mosfet

SM2608NSC
SM2608NSC

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S BVDSS -20V Simple Drive Requirement D D RDS(ON) 65mΩ Small Package Outline Surface Mount Device G ID -5.0A D SOT-26 D DESCRIPTION D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The

5.6. csm260.pdf Size:126K _update_mosfet

SM2608NSC

CSM260 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 250 W 线性降低系数 2.0 W/℃ ID (VGS=10V,TC=25℃) 35 A 极 ID (VGS=10V,TC=100℃) 28 A 限 IDM 140 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 RthJC 0.5 ℃/W 特 RthJA 48 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

5.7. sm2602nsc.pdf Size:303K _update_mosfet

SM2608NSC
SM2608NSC

SM2602NSC ® N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6.2A, S D RDS(ON)= 24m (max.) @ VGS=4.5V D G RDS(ON)= 32m (max.) @ VGS=2.5V D D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powered System

5.8. sm2603psc.pdf Size:305K _update_mosfet

SM2608NSC
SM2608NSC

SM2603PSC ® P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.3A, S RDS(ON)= 48m (max.) @ VGS=-4.5V D D RDS(ON)= 68m (max.) @ VGS=-2.5V G D RDS(ON)= 100m (max.) @ VGS=-1.8V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, Portable Equip

5.9. sm2607csc.pdf Size:203K _sino

SM2608NSC
SM2608NSC

SM2607CSC ® Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description • N-Channel 20V/5A, D2 RDS(ON)=38mΩ(max.) @ VGS=4.5V S1 D1 G2 RDS(ON)=54mΩ(max.) @ VGS=2.5V S2 G1 RDS(ON)=85mΩ(max.) @ VGS=1.8V • P-Channel Top View of SOT-23-6 -20V/-3.3A, RDS(ON)=85mΩ(max.) @ VGS=-4.5V (4)D2 (6)D1 RDS(ON)=120mΩ(max.) @ VGS=-2.5V RDS(ON)=210mΩ(max.)

5.10. sm2605psc.pdf Size:161K _sino

SM2608NSC
SM2608NSC

SM2605PSC ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-7.5A, S D RDS(ON) = 30mΩ(max.) @ VGS =-10V D G RDS(ON) = 45mΩ(max.) @ VGS =-4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powe

5.11. sm2604nsc.pdf Size:159K _sino

SM2608NSC
SM2608NSC

SM2604NSC ® N-Channel Enhancement Mode MOSFET Features Pin Description 30V/7.4A, S RDS(ON)= 24mΩ(max.) @ VGS=10V D D G RDS(ON)= 32.5mΩ(max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered S

5.12. sm2601psc.pdf Size:162K _sino

SM2608NSC
SM2608NSC

SM2601PSC ® P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-7.3A , S D RDS(ON)=26mΩ (Max.) @ VGS=-4.5V D G D RDS(ON)=38mΩ (Max.) @ VGS=-2.5V D RDS(ON)=58mΩ (Max.) @ VGS=-1.8V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Computer,

5.13. sm2609psc.pdf Size:161K _sino

SM2608NSC
SM2608NSC

SM2609PSC ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, S D RDS(ON) = 85mΩ(max.) @ VGS =-10V D G D RDS(ON) = 135mΩ(max.) @ VGS =-4.5V D Reliable and Rugged Top View of SOT-23-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, Portable Equipment and Battery Powere

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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