SM2A12NSKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM2A12NSKP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: DFN5X6-8

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SM2A12NSKP Datasheet (PDF)

..1. Size:291K sino
sm2a12nskp.pdf

SM2A12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/23A,DDDD RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DD(4)ApplicationsG Power Management in TV Converter. DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking

6.1. Size:169K sino
sm2a12nsu.pdf

SM2A12NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A,D RDS(ON)= 70m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DGApplications Power Management in TV Converter.S DC-DC Converter.N-Channel MOSFETOrdering and Marking InformationPackage C

6.2. Size:247K sino
sm2a12nsf.pdf

SM2A12NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220DGApplications High Frequency DC-DC converters.S Plasma Display Panel. Power Management in TV Converter.N-Channel MOSFETOrdering and Marking Informati

9.1. Size:174K sino
sm2a18dsk.pdf

SM2A18DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 200V/0.9A,D2RDS(ON)= 1140m(max.) @ VGS= 10V RDS(ON)= 1300m(max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 Power Management in D

9.2. Size:168K sino
sm2a16nsf sm2a16nsfp.pdf

SM2A16NSF/SM2A16NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=156m (max.) @ VGS=10V Reliable and RuggedS S Lead Free and Green Devices AvailableD DG G(RoHS Compliant)Top View of TO-220FPTop View of TO-220 100% UIS + Rg TestedDApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking Infor

9.3. Size:302K sino
sm2a11nsf.pdf

SM2A11NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/58A, RDS(ON)= 26.5m (max.) @ VGS= 10V 100% UIS + Rg TestedS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking Informatio

9.4. Size:185K sino
sm2a18nsv.pdf

SM2A18NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.1A,RDS(ON)= 1140m(max.) @ VGS= 10VG RDS(ON)= 1300m(max.) @ VGS= 4.5VDS 100% UIS+Rg tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in TV Inverter.S N-Channel MOSFETOrdering and Marking In

9.5. Size:781K cn vbsemi
sm2a18nsv.pdf

SM2A18NSVwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSDG

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