SM4514NHKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4514NHKP
   Código: 4514NH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: DFN5X6-8

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SM4514NHKP Datasheet (PDF)

..1. Size:172K sino
sm4514nhkp.pdf

SM4514NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)=3.4m (Max.) @ VGS=10VD RDS(ON)=5.5m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Ap

9.1. Size:192K taiwansemi
tsm4513dcs.pdf

TSM4513D Complementary Enhancement MOSFET SOP-8 Pin Definition: MOSFET PRODUCT SUMMARY 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 14 @ VGS = 4.5V 6 4. Gate 2 5. Drain 2 N-Channel 20 16 @ VGS = 2.5V 4 18 @ VGS = -4.5V -6 P-Channel -20 25 @ VGS = -2.5V -4 Block Diagram Features Low RDS(ON) Provides

9.2. Size:266K sino
sm4513nhkp.pdf

SM4513NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)= 2.7m (Max.) @ VGS=10VD RDS(ON)= 3.5m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoH

9.3. Size:267K sino
sm4512nhkp.pdf

SM4512NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/80A,DDD RDS(ON)= 1.9m (Max.) @ VGS=10VD RDS(ON)= 3m (Max.) @ VGS=4.5V 100% UIS + Rg TestedGPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lower Qg and Qgd for high-speed switching(5,6,7,8) Lower RDS(ON) to Minimize Conduction LossesDDDD Lead Free and Green Devices Available (RoHS

9.4. Size:1190K globaltech semi
gsm4516w.pdf

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltag

9.5. Size:1304K globaltech semi
gsm4516.pdf

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltage power man

9.6. Size:1077K globaltech semi
gsm4510s.pdf

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m@VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m@VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m@VGS=

9.7. Size:337K silicon standard
ssm4513m.pdf

SSM4513M/GMN AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement N-CH BV 35VD2 DSSD2Low on-resistance R 36mD1DS(ON)D1Fast switching performance ID 5.8AG2P-CH BVDSS -35VS2 G1SO-8 S1RDS(ON) 68mDescription ID -4.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching, rugge

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