SM3425NHQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3425NHQA
   Código: SM3425N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   trⓘ - Tiempo de subida: 7.8 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: DFN3.3X3.3A-8

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SM3425NHQA Datasheet (PDF)

..1. Size:250K sino
sm3425nhqa.pdf

SM3425NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/25A,RDS(ON) = 5.2m (max.) @ VGS =10VGSSRDS(ON) = 8.3m (max.) @ VGS =4.5VS ESD protectionDFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available(5,6,7,8)DDDD (RoHS Compliant)Applications(4) G Power Management in Notebook Computer,

8.1. Size:912K globaltech semi
gsm3425.pdf

GSM3425 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m@VGS=2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=1.8V Super high density cell design for extremely These devices are

9.1. Size:203K taiwansemi
tsm3424cx6.pdf

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

9.2. Size:604K sino
sm3429bsqa.pdf

SM3429BSQADual P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-19A* D2D2D1D1RDS(ON)=29m(max.)@VGS=-4.5VRDS(ON)=40m(max.)@VGS=-2.5VG2Pin 1S2RDS(ON)=60m(max.)@VGS=-1.8V G1S1 100% UIS + Rg TestedDFN3.3x3.3G-8_EP2 Reliable and Rugged Lead Free and Green Devices Available(8) (7) (6) (5)D1 D1 D2 D2(RoHS Compliant)(2) (4)A

9.3. Size:253K sino
sm3424nhqa.pdf

SM3424NHQA N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/77A, DDD RDS(ON)= 3.4m (Max.) @ VGS=10V RDS(ON)= 5.1m (Max.) @ VGS=4.5VGSSS Lower Qg and Qgd for high-speed switching Lower RDS(ON) to Minimize Conduction LossesDFN3.3x3.3A-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devices Av

9.4. Size:883K globaltech semi
gsm3426.pdf

GSM3426 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V Super high density cell design for extremely These devices are partic

9.5. Size:772K globaltech semi
gsm3424a.pdf

GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m@VGS=4.5V Super high density cell design for extremely These devices are

9.6. Size:883K globaltech semi
gsm3424.pdf

GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V Super high density cell design for extremely These devices are pa

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jsm3420.pdf

JSM3420N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-30.024@ 10V31.GATE20V6.0A0.027@ 4.5V2.SOURCE3.DRAIN10.035@ 2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageAPPLICATIONLoad Switch for Portable DevicesDC/DC ConverterMaximum ratings (Ta=25 unless

9.8. Size:634K jsmsemi
jsm3420s.pdf

JSM3420SN-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.024@ 10V31.GATE20V6.0A0.027@ 4.5V2.SOURCE3.DRAIN10.035@ 2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageAPPLICATIONLoad Switch for Portable DevicesDC/DC ConverterMaximum ratings (Ta=25 unless o

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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