SM6128NSUB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM6128NSUB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: TO251

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SM6128NSUB Datasheet (PDF)

..1. Size:150K sino
sm6128nsub.pdf

SM6128NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/58A,RDS(ON)=11.5m (max.) @ VGS=10VSRDS(ON)=14.5m (max.) @ VGS=4.5VDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS + Rg TestedGApplications DC-DC Converter Power Load Switching ApplicationSN-Channel MOSFETOr

5.1. Size:262K sino
sm6128nsu.pdf

SM6128NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/58A,RDS(ON)=11.5m (max.) @ VGS=10VSRDS(ON)=14.5m (max.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications DC-DC Converter Power Load Switching ApplicationSN-Channel MOSFETOrdering and Marking InformationPacka

6.1. Size:159K sino
sm6128nsqg.pdf

SM6128NSQG N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 60V/41Aa, RDS(ON)= 12m (max.) @ VGS=10VGS RDS(ON)= 14.5m (max.) @ VGS=4.5V Pin 1SS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available(5,6,7,8)D D DD(RoHS Compliant)Applications(4) G Secondary Side Synchronous Recti

6.2. Size:291K sino
sm6128nskp.pdf

SM6128NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/50A,DDDRDS(ON)=10.8m (max.) @ VGS=10VRDS(ON)=13.5m (max.) @ VGS=4.5VGPin 1S Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Secondary Side Synchronous Rectification DC-DC Converter Motor ControlS S S

6.3. Size:262K sino
sm6128nsk.pdf

SM6128NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 60V/12A, RDS(ON)= 12m (max.) @ VGS=10VS RDS(ON)= 14.5m (max.) @ VGS=4.5VSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)(5,6,7,8)DDDDApplications Secondary Side Synchronous Rectification(4) G DC-DC Converter Motor Control Loa

6.4. Size:824K cn vbsemi
sm6128nsk.pdf

SM6128NSKwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD C

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