SM6020NSF Todos los transistores

 

SM6020NSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM6020NSF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 166 W

Tensión drenaje-fuente (Vds): 63 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 84 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 675 pF

Resistencia drenaje-fuente RDS(on): 0.0045 Ohm

Empaquetado / Estuche: TO220

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SM6020NSF Datasheet (PDF)

1.1. sm6020nsfp.pdf Size:151K _sino

SM6020NSF
SM6020NSF

SM6020NSFP ® N-Channel Enhancement Mode MOSFET Features Pin Description • 63V/80A b, RDS(ON)= 4.5mΩ (Max.) @ VGS=10V 100% UIS + Rg Tested S D Reliable and Rugged G Lead Free and Green Devices Available Top View of TO-220FP (RoHS Compliant) D Applications G Secondary Side Synchronous Rectification. DC-DC Converter. Motor Control. S Load Switching. . N-Channel

1.2. sm6020nsf.pdf Size:249K _sino

SM6020NSF
SM6020NSF

SM6020NSF ® N-Channel Enhancement Mode MOSFET Features Pin Description 63V/80A, RDS(ON)= 4.5m (Max.) @ VGS=10V Reliable and Rugged S D G Lead Free and Green Devices Available Top View of TO-220 (RoHS Compliant) D Applications G High Efficiency Synchronous Rectification in SMPS. S Uninterruptible Power Supply. N-Channel MOSFET . Ordering and Marking Information P

 2.1. sm6020nsw.pdf Size:268K _sino

SM6020NSF
SM6020NSF

SM6020NSW ® N-Channel Enhancement Mode MOSFET Features Pin Description 63V/80A, RDS(ON)= 4.5m (Max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-247 D Applications G High Efficiency Synchronous Rectification in SMPS. S Uninterruptible Power Supply. N-Channel MOSFET . Ordering and Marking Information Pa

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