IRF7416 Todos los transistores

 

IRF7416 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7416

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 890 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SO8

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IRF7416 datasheet

 ..1. Size:116K  international rectifier
irf7416.pdf pdf_icon

IRF7416

PD - 9.1356D IRF7416 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel Mosfet VDSS = -30V 2 7 S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 Dynamic dv/dt Rating G D RDS(on) = 0.02 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

 ..2. Size:237K  international rectifier
irf7416pbf.pdf pdf_icon

IRF7416

PD - 95137A IRF7416PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D RDS(on) = 0.02 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

 0.1. Size:269K  1
irf7416qpbf.pdf pdf_icon

IRF7416

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

 0.2. Size:228K  international rectifier
irf7416pbf-1.pdf pdf_icon

IRF7416

IRF7416PbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.020 2 7 (@V = -10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 -10 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

Otros transistores... IRF740A , IRF740AL , IRF740AS , IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A , IRF630 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D , NCEP85T25D , NCEP85T25T .

History: FS40SM-6 | FS20UM-6 | FS3UM-9 | TPCP8405 | FS16UM-6 | FS16VS-6 | FS30SM-6

 

 

 

 

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