SM3322NHQA Todos los transistores

SM3322NHQA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/70A, D D D RDS(ON)= 4.2m (Max.) @ VGS=10V D RDS(ON)= 6.5m (Max.) @ VGS=4.5V G Reliable and Rugged S S S Lower Qg and Qgd for high-speed switching DFN3x3A-8_EP Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) 100% UIS + Rg Tested DDDD Lead Free and Green Devices Available (RoH

SM3324NHQG N-Channel Enhancement Mode MOSFET Features Pin Description 30V/77A, D D D D RDS(ON)= 3.6m (Max.) @ VGS=10V RDS(ON)= 5.3m (Max.) @ VGS=4.5V G S Lower Qg and Qgd for high-speed switching S S Lower RDS(ON) to Minimize Conduction Losses DFN3x3D-8_EP ESD Protection (5,6,7,8) 100% UIS + Rg Tested DDDD Reliable and Rugged Lead Free and Green Devic

SM3326NHQA N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/27.5A, D D RDS(ON) =9m (max.) @ VGS =10V RDS(ON) =14m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3x3A-8_EP ESD Protection Reliable and Rugged (5,6,7,8) DDDD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer, Portab

SM3320NSQA/SM3320NSQG N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/49A, D D D D D D D D RDS(ON) = 7.8m (max.) @ VGS =10V RDS(ON) = 12.3m (max.) @ VGS =4.5V G SG S S S S S Integrated Schottky Diode DFN3x3A-8_EP DFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested (5,6,7,8) DD DD Reliable and Rugged

SM3323NHQA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/54A, D D D D RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5V G S S S Reliable and Rugged Lower Qg and Qgd for high-speed switching DFN3.3x3.3A-8_EP Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) 100% UIS + Rg Tested DDDD Lead Free and Green Devices Available (RoHS Comp

SM3323NHQG N-Channel Enhancement Mode MOSFET Features Pin Description 30V/54A, D D D D RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5V G S Reliable and Rugged S S Lower Qg and Qgd for high-speed switching DFN3x3D-8_EP Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) 100% UIS + Rg Tested DDDD Lead Free and Green Devices Available (RoHS

GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=60m @VGS=-10V voltage