SM6126NSKP
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM6126NSKP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 100
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13
nS
Cossⓘ - Capacitancia
de salida: 400
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005
Ohm
Paquete / Cubierta:
DFN5X6-8
- Selección de transistores por parámetros
SM6126NSKP
Datasheet (PDF)
..1. Size:290K sino
sm6126nskp.pdf 
SM6126NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/100A,DDD RDS(ON)=5.0m (max.) @ VGS=10V RDS(ON)=6.0m (max.) @ VGS=4.5VGPin 1S Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Secondary Side Synchronous Rectification DC-DC Converter Motor ControlS S S
9.1. Size:157K sino
sm6127nsf.pdf 
SM6127NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80Aa, RDS(ON)= 7.3m (max.) @ VGS=10V RDS(ON)= 8.7m (max.) @ VGS=4.5VSD 100% UIS + Rg TestedG Reliable and RuggedTop View of TO-220 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Secondary Side Synchronous Rectification DC-DC Converter Motor Con
9.2. Size:291K sino
sm6127nskp.pdf 
SM6127NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/80Aa,DDD RDS(ON)=5.9m (max.) @ VGS=10V RDS(ON)=7.2m (max.) @ VGS=4.5VGPin 1S Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Secondary Side Synchronous Rectification DC-DC Converter Motor ControlS S S
9.3. Size:289K sino
sm6125nskp.pdf 
SM6125NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/100Aa,DDD RDS(ON)= 4m (max.) @ VGS=10V RDS(ON)= 4.8m (max.) @ VGS=4.5VGPin 1S Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Secondary Side Synchronous Rectification DC-DC Converter Motor ControlS S S
9.4. Size:146K sino
sm6127nsuc.pdf 
SM6127NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80Aa, RDS(ON)= 6.6m (max.) @ VGS=10VS RDS(ON)= 8.0m (max.) @ VGS=4.5VDG Reliable and Rugged Lead Free and Green Devices Available Top View of TO-251S(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Secondary Side Synchronous Rectification DC-DC ConverterS Motor
9.5. Size:159K sino
sm6128nsqg.pdf 
SM6128NSQG N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 60V/41Aa, RDS(ON)= 12m (max.) @ VGS=10VGS RDS(ON)= 14.5m (max.) @ VGS=4.5V Pin 1SS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available(5,6,7,8)D D DD(RoHS Compliant)Applications(4) G Secondary Side Synchronous Recti
9.6. Size:291K sino
sm6128nskp.pdf 
SM6128NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/50A,DDDRDS(ON)=10.8m (max.) @ VGS=10VRDS(ON)=13.5m (max.) @ VGS=4.5VGPin 1S Reliable and RuggedSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)(5,6,7,8)DDDDApplications(4) G Secondary Side Synchronous Rectification DC-DC Converter Motor ControlS S S
9.7. Size:298K sino
sm6129nskp.pdf 
SM6129NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/39A,DDDRDS(ON)=13.2m (max.) @ VGS=10VRDS(ON)=15.6m (max.) @ VGS=4.5VGPin 1S 100% UIS + Rg TestedSS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(5,6,7,8)(RoHS Compliant)DDDDApplications(4) G Secondary Side Synchronous Rectification DC-DC Convert
9.8. Size:262K sino
sm6128nsk.pdf 
SM6128NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 60V/12A, RDS(ON)= 12m (max.) @ VGS=10VS RDS(ON)= 14.5m (max.) @ VGS=4.5VSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)(5,6,7,8)DDDDApplications Secondary Side Synchronous Rectification(4) G DC-DC Converter Motor Control Loa
9.9. Size:236K sino
sm6127nsk.pdf 
SM6127NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 60V/12A,D RDS(ON)= 6.6m (max.) @ VGS=10V RDS(ON)= 8.0m (max.) @ VGS=4.5VSSS 100% UIS + Rg TestedG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D DApplications(4)G Secondary Side Synchronous Rectification DC-DC Co
9.10. Size:150K sino
sm6127nsub.pdf 
SM6127NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80Aa, RDS(ON)= 6.6m (max.) @ VGS=10VS RDS(ON)= 8.0m (max.) @ VGS=4.5VDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Secondary Side Synchronous Rectification DC-DC ConverterS Motor
9.11. Size:272K sino
sm6129nsu.pdf 
SM6129NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/52A,RDS(ON)=13.2m (max.) @ VGS=10VSRDS(ON)=15.6m (max.) @ VGS=4.5VG 100% UIS + Rg TestedTop View of TO-252-2 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications DC-DC Converter Power Load Switching ApplicationSN-Channel MOSFETOrdering and Mar
9.12. Size:262K sino
sm6128nsu.pdf 
SM6128NSU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/58A,RDS(ON)=11.5m (max.) @ VGS=10VSRDS(ON)=14.5m (max.) @ VGS=4.5VG Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices Available(RoHS Compliant)DGApplications DC-DC Converter Power Load Switching ApplicationSN-Channel MOSFETOrdering and Marking InformationPacka
9.13. Size:150K sino
sm6128nsub.pdf 
SM6128NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/58A,RDS(ON)=11.5m (max.) @ VGS=10VSRDS(ON)=14.5m (max.) @ VGS=4.5VDG Reliable and RuggedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)D 100% UIS + Rg TestedGApplications DC-DC Converter Power Load Switching ApplicationSN-Channel MOSFETOr
9.14. Size:824K cn vbsemi
sm6128nsk.pdf 
SM6128NSKwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD C
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