SM3308NSQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM3308NSQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/35A,DDRDS(ON) =7.3m (max.) @ VGS =10VRDS(ON) =10.5m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP ESD Protection Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Notebook Computer,Port

SM3303PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-50A,DDDDRDS(ON) =9.5m(max.) @ VGS =-10VRDS(ON) =16m(max.) @ VGS =-4.5V Reliable and RuggedSGSS Lead Free and Green Devices AvailableDFN3x3-8 (RoHS Compliant) 100% UIS + Rg Tested( 5,6,7,8 )DDDD HBM ESD protection level pass 8KVNote : The diode connected between the gate a

SM3307PSQA/SM3307PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View -30V/-33A,DDDDRDS(ON) =18m (max.) @ VGS =-10VDDDDRDS(ON) =30m (max.) @ VGS =-4.5VGSG SSSSS Super High Dense Cell DesignDFN3x3-8(punch type) DFN3x3-8(saw type) Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available

SM3305PSQA/SM3305PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View -30V/-40A,DDDRDS(ON) =12m (max.) @ VGS =-10V DDDDDRDS(ON) =17m (max.) @ VGS =-6VGSG SSRDS(ON) =21m (max.) @ VGS =-4.5V SSS Reliable and Rugged DFN3x3-8(punch type) DFN3x3-8(saw type) Lead Free and Green Devices Available ( 5,6,7,8 )D D

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V Super high density cell design for extremelyThese devices are

GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly sui

HSM3303 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3303 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -6.5 A The HSM3303 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

HSM3305 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DSThe HSM3305 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and R 42 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -5 A DThe HSM3305 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func