SM3319NSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM3319NSQA/SM3319NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/23A,DDDDDRDS(ON) = 21m(max.) @ VGS = 10V D DDRDS(ON) = 30m(max.) @ VGS = 4.5VGSG SSSS Provide Excellent Qgd x RDS(ON) SDFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)D D DD Lead Free and

SM3319NAQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/14A,RDS(ON) = 24m(max.) @ VGS = 10VGRDS(ON) = 35m(max.) @ VGS = 4.5V SSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)DDDD ESD Protection Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in No

SM3313PSQG P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -12V/-37A,RDS(ON) =14m(max.) @ VGS =-4.5VRDS(ON) =19m(max.) @ VGS =-2.5VSGSSRDS(ON) =26m(max.) @ VGS =-1.8VDFN3x3D-8_EPRDS(ON) =36m(max.) @ VGS =-1.5V 100% UIS + Rg Tested( 5,6,7,8 )D D D D Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(4)

SM3318NSQA/SM3318NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/44A,DDD RDS(ON) = 9.2m (max.) @ VGS =10V DDDDD RDS(ON) = 13.7m (max.) @ VGS =4.5VGSG SSS Integrated Schottky Diode SSDFN3x3-8(punch type) DFN3x3-8(saw type) Avalanche Rated Reliable and Rugged(5,6,7,8)DD DD Lead Free and Gre

SM3316NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/25A, DRDS(ON) =16m (max.) @ VGS =10VRDS(ON) =21.5m (max.) @ VGS =4.5VGSSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer,Port

SM3313NSQA/SM3313NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/46A,DDD DDD DDRDS(ON) = 8.1m(max.) @ VGS = 10VRDS(ON) = 10.7m(max.) @ VGS = 4.5VGSG SSSSS Provide Excellent Qgd x RDS(ON)DFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)D D DD Lead Free

SM3314NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/12A,RDS(ON) = 10.5m(max.) @ VGS = 10VGRDS(ON) = 15m(max.) @ VGS = 4.5VSSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Comput

SM3317NSQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/34A,RDS(ON) =11.5m(max.) @ VGS =10VGSRDS(ON) =15.5m(max.) @ VGS =4.5VSS Avalanche RatedDFN3x3A-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer

SM3315NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 30V/54A,RDS(ON) = 6.6m(max.) @ VGS = 10VRDS(ON) = 9.5m(max.) @ VGS = 4.5VGSSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Notebook Comput

SM3317NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/34A, DRDS(ON) =11.5m(max.) @ VGS =10VRDS(ON) =15.5m(max.) @ VGS =4.5VGSSS Avalanche RatedDFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer,

SM3316NSQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/25A,DDRDS(ON) =16m(max.) @ VGS =10VRDS(ON) =21.5m(max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer,

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f

GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

SSM3310GH,JP-channel Enhancement-mode Power MOSFET2.5V low gate drive capability BV -20VDSSDSimple drive requirement R 150mDS(ON)Fast switching ID -10AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM3310GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor use in low voltage b