MXP1018CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MXP1018CT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 76 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 707 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
MXP1018CT Datasheet (PDF)
mxp1018ct.pdf

MXP1018CT Datasheet 100V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 100 V 18 m 76Features: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP1018 TO220 MXP Absolute Maximum Ratings Tc=2
mxp1015at.pdf

MXP1015AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 15m 82A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
mxp1006at.pdf

MXP1006AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
mxp1008at.pdf

MXP1008AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NCE0250D | QS8M51 | WSF20P03 | IPI80CN10NG
History: NCE0250D | QS8M51 | WSF20P03 | IPI80CN10NG



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