MXP6006CT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MXP6006CT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 158 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Id|ⓘ - Corriente continua de drenaje: 115 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 522 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de MXP6006CT MOSFET
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MXP6006CT datasheet
mxp6006ct.pdf
MXP6006CT Preliminary Datasheet 60V N-Channel MOSFET Applications Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 60 V 6.0 m 116 A Features LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6006CT TO220 MXP Absolute Maximu
mxp6006dt-df.pdf
MXP6006DT, MXP6006DF Datasheet 60V N-Channel MOSFET Applications a Power Supply VDS RDS(ON)(MAX) ID DC-DC Converters 60V 6m 115A Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Capability Ordering Information Park Number Package Brand MXP6006DT TO-220 MXP TO-263 TO-263 MXP M
mxp6006dp.pdf
MXP6006DP Datasheet 60V N-Channel MOSFET Applications a Power Supply VDS RDS(ON)(MAX) ID DC-DC Converters 60V 6m 115A Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Capability Ordering Park Number Package Brand MXP6006DP Power SO-8 MXP Absolute Maximum Ratings TC=25 unless
Otros transistores... MXP6018CD , MXP6018CT , MXP1018CT , MXP3007CT , MXP3007CD , MXP4005CT , MXP5504CT , MXP6004CTS , SPP20N60C3 , MXP6006DP , MXP6006DT , MXP6006DF , APM9988QB , SM1501GSQH , SM1600DSCS , SM1660DSCS , SM1A23DSK .
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