APM9988QB Todos los transistores

 

APM9988QB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APM9988QB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm

Encapsulados: DFN2X5A-6

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APM9988QB datasheet

 ..1. Size:268K  sino
 apm9988qb.pdf pdf_icon

APM9988QB

APM9988QB Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)=17.5m (Max.) @ VGS=4.5V G2 RDS(ON)=18.5m (Max.) @ VGS=4V RDS(ON)=22m (Max.) @ VGS=3.1V S1 S1 RDS(ON)=27.5m (Max.) @ VGS=2.5V G1 Reliable and Rugged Top View of TDFN2x5-6 Lead Free and Green Devices Available (RoHS Compliant) D D (3) (4) G1 G2 Applications Power Manageme

 6.1. Size:219K  anpec
 apm9988qa.pdf pdf_icon

APM9988QB

APM9988QA Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, 8 D1 S1 1 RDS(ON)= 14m (typ.) @ VGS= 4.5V 7 D1 G1 2 RDS(ON)= 15m (typ.) @ VGS= 4V D2 S2 3 6 RDS(ON)= 17m (typ.) @ VGS= 3V G2 4 5 D2 RDS(ON)= 19m (typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available (8) (7)

 6.2. Size:343K  sino
 apm9988qg.pdf pdf_icon

APM9988QB

APM9988QG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)= 17.5m (Max.) @ VGS=4.5V G2 RDS(ON)= 18.5m (Max.) @ VGS=4V S1 RDS(ON)= 22m (Max.) @ VGS=3.1V S1 G1 RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell Design Top View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices Available D D (RoHS Compliant)

 7.1. Size:205K  anpec
 apm9988co.pdf pdf_icon

APM9988QB

APM9988CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an

MOSTRAR MÁS

Otros transistores... MXP3007CD , MXP4005CT , MXP5504CT , MXP6004CTS , MXP6006CT , MXP6006DP , MXP6006DT , MXP6006DF , AON7410 , SM1501GSQH , SM1600DSCS , SM1660DSCS , SM1A23DSK , SM2630DSC , SM2A18DSK , SM3380EHQG , SM3381EHQG .

History: WMM25N80M3 | 2SK1623 | NTD4965N | JCS4N60FB | 2SK1356 | NDT6N60 | WMM28N60F2

 

 

 

 

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