SM1501GSQH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM1501GSQH Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS2 20V/0.55A ,G2 RDS(ON)= 800m (max.) @ VGS=4.5VD1D2G1RDS(ON)= 1100m (max.) @ VGS=2.5VS1RDS(ON)= 1450m (max.) @ VGS=1.8VTop View of SOT-563 Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(6)D1(3)D2 ESD Protection(2)(5)ApplicationsG1G2 Power Suppl

Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

Technische Information / technical informationIGBT-ModuleBSM150GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

Technische Information / technical informationIGBT-ModuleBSM150GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 300 APeriodischer Kollektor Spitzen

Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 60C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

Technische Information / Technical InformationIGBT-ModuleBSM 150 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 55C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 180 APeriodischer Kollektor Spitzenstrom

BSM 150 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

BSM 150 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

BSM 150 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 OhmType VCE IC Package Ordering CodeBSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

BSM 150 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

CSM150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 34 A ID VGS=10V,TC=100 21 A IDM 136 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=21A 0