SM1501GSQH Todos los transistores

SM1501GSQH Dual N-Channel Enhancement Mode MOSFET Features Pin Description S2 20V/0.55A , G2 RDS(ON)= 800m (max.) @ VGS=4.5V D1 D2 G1 RDS(ON)= 1100m (max.) @ VGS=2.5V S1 RDS(ON)= 1450m (max.) @ VGS=1.8V Top View of SOT-563 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (6)D1 (3)D2 ESD Protection (2) (5) Applications G1 G2 Power Suppl

Technische Information / Technical Information IGBT-Module BSM 150 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 60 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 180 A Periodischer Kollektor Spitzenstrom

Technische Information / technical information IGBT-Module BSM150GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

Technische Information / technical information IGBT-Module BSM150GAL120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit

Technische Information / Technical Information IGBT-Module BSM 150 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 300 A Periodischer Kollektor Spitzen

Technische Information / Technical Information IGBT-Module BSM 150 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 60 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 180 A Periodischer Kollektor Spitzenstrom

Technische Information / Technical Information IGBT-Module BSM 150 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 55 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 180 A Periodischer Kollektor Spitzenstrom

BSM 150 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE

BSM 150 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE

BSM 150 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 Ohm Type VCE IC Package Ordering Code BSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700

BSM 150 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

TSM150P04LCS Taiwan Semiconductor P-Channel Power MOSFET -40V, -22A, 15m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT Logic level VDS -40 V Low gate charge for fast power switching RDS(on) VGS = -10V 15 100% UIS and Rg tested m Compliant to RoHS directive 2011/65/EU and in (max) VGS = -4.5V

CSM150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 34 A ID VGS=10V,TC=100 21 A IDM 136 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=21A 0