SM9998DSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM9998DSQG
   Código: 9998*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 23.2 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: DFN2X3A-6

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SM9998DSQG Datasheet (PDF)

..1. Size:493K sino
sm9998dsqg.pdf

SM9998DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/9.7A,G2S2S2 RDS(ON)= 7.5m (Max.) @ VGS=4.5V RDS(ON)= 7.9m (Max.) @ VGS=4V RDS(ON)= 8.2m (Max.) @ VGS=3.7VG1 RDS(ON)= 8.7m (Max.) @ VGS=3.1VS1S1 RDS(ON)= 9.9m (Max.) @ VGS=2.5VDFN2x3A-6_EP ESD protection 100% UIS TestedD D Reliable and Rugged Lead Free and Green Dev

9.1. Size:645K sino
sm9993dsqg.pdf

SM9993DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A,G2S2S2 RDS(ON)= 7.4m (Max.) @ VGS=4.5V RDS(ON)= 7.6m (Max.) @ VGS=4V RDS(ON)= 8m (Max.) @ VGS=3.7VG1 RDS(ON)= 8.7m (Max.) @ VGS=3.1VS1S1 RDS(ON)= 10m (Max.) @ VGS=2.5VDFN2x3-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Compliant) ESD protection(3) (4)

9.2. Size:174K sino
sm9992dsqg.pdf

SM9992DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A,S2 RDS(ON)=8.1m (Max.) @ VGS=4.5VS2G2 RDS(ON)=8.5m (Max.) @ VGS=4V RDS(ON)=8.8m (Max.) @ VGS=3.7VS1S1 RDS(ON)=9.2m (Max.) @ VGS=3.1VG1 RDS(ON)=11m (Max.) @ VGS=2.5VTop View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Complian

9.3. Size:355K sino
sm9990dsqg.pdf

SM9990DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,RDS(ON)= 31m (Max.) @ VGS=4VRDS(ON)= 36m (Max.) @ VGS=3.1VRDS(ON)= 42m (Max.) @ VGS=2.5V Reliable and Rugged Lead Free and Green Devices AvailableDFN2x2-8 (top/bottom)(RoHS Compliant) ESD ProtectionD(5) D(6) D(7) D(8)(2) (4)G1G2Applications Power Management in Notebook Compute

9.4. Size:259K sino
sm9994dso.pdf

SM9994DSODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDS2 20V/9A,S2G2RDS(ON)= 9.5m (max.) @ VGS= 4.5VRDS(ON)= 10m (max.) @ VGS= 4VDS1RDS(ON)= 10.5m (max.) @ VGS= 3.7VS1G1RDS(ON)= 11.5m (max.) @ VGS= 3.1VRDS(ON)= 13m (max.) @ VGS= 2.5VTop View of TSSOP-8 Reliable and Rugged(1) (8) ESD ProtectedD D Lead Free and Green Devices Available

9.5. Size:989K globaltech semi
gsm9990s.pdf

GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m@VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L

9.6. Size:963K globaltech semi
gsm9997.pdf

GSM9997 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9997, N-Channel enhancement mode 100V/8A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.7. Size:891K globaltech semi
gsm9995s.pdf

GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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