SM4805DSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4805DSK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET SM4805DSK

SM4805DSK Datasheet (PDF)

..1. Size:269K sino
sm4805dsk.pdf

SM4805DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 30V/6A, D1D2D2 RDS(ON)= 21m (max.) @ VGS= 10V RDS(ON)= 30m (max.) @ VGS= 4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant)Top View of SOP-8 100% UIS TestedD1 D1 D2 D2ApplicationsG1 G2 Power Management in Notebook Computer,Portable Equipm

8.1. Size:532K huashuo
hsm4805.pdf

HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4805 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 12 m gate charge for most of the synchronous buck converter applications. ID -9 A The HSM4805 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r

8.2. Size:832K cn sps
sm4805prl.pdf

SM4805PRL-30V /-9A Dual 2P Power MOSFET C C03C C -30V /-9A Dual 2P Power MOSFET 9C03CGeneral Description -30 VV DS-30V /-9A Dual 2P Power MOSFET 2.1 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 3.3 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -9 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM

9.1. Size:269K sino
sm4802dsk.pdf

SM4802DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 30V/11.2A,D2D2 RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 12m (max.) @ VGS= 4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant)Top View of SOP-8 100% UIS TestedD1 D1 D2 D2ApplicationsG1 G2 Power Management in Notebook Computer,Portable Equ

9.2. Size:264K sino
sm4804dsk.pdf

SM4804DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 30V/8A, D1D2D2 RDS(ON)= 17m (max.) @ VGS= 10V RDS(ON)= 23m (max.) @ VGS= 4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant)Top View of SOP-8 100% UIS TestedD1 D1 D2 D2ApplicationsG1 G2 Power Management in Notebook Computer,Portable Equipm

9.3. Size:265K sino
sm4803dsk.pdf

SM4803DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 30V/10A,D2D2 RDS(ON)= 13m (max.) @ VGS= 10V RDS(ON)= 17m (max.) @ VGS= 4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant)Top View of SOP-8 100% UIS TestedD1 D1 D2 D2ApplicationsG1 G2 Power Management in Notebook Computer,Portable Equi

9.4. Size:723K globaltech semi
gsm4804.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.5. Size:283K silicon standard
ssm4800agm.pdf

SSM4800AGM N-Channel Enhancement ModePower MosfetPRODUCT SUMMARY DSimple Drive RequirementBVDSS 30VDDLow On-resistance RDS(ON) 18mDFast Switching CharacteristicID 9.4AGRoHS Compliant SSSO-8SDESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on

9.6. Size:595K cn sps
sm4803aprl.pdf

SM4803APRL-30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03CGeneral Description -30 VV DS-30V /-5A Dual 2P Power MOSFET 51.8 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 81.4 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -5 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

9.7. Size:28499K cn sps
sm4800.pdf

SM4800Dual N-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement-Mode MOSFETDescription The SM4800 uses advanced trench technology to 1 8S2 D2provide excellent RDS(ON) and low gate charge. The 2 7G2 D2two MOSFETs make a compact and efficient switch 3 6S1 D1and synchronous rectifier combination for use in 4 5G1 D1buck converters.SOIC-8General F

9.8. Size:753K cn sps
sm4807prl.pdf

SM4807PRL-30V /-6A Dual 2P Power MOSFET C C03C C -30V /-6A Dual 2P Power MOSFET 6C03CGeneral Description -30 VV DS-30V /-6A Dual 2P Power MOSFET 40.6 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 63.8 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

9.9. Size:768K cn sps
sm480t9rl.pdf

SM480T9RL30V /25A Single N Power MOSFET H N03H N 30V /25A Single N Power MOSFET 25N03HGeneral Description 30 VV DS30V /25A Single N Power MOSFET 23.1 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 36.3 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 25 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

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