SM9926DSK Todos los transistores

 ..1. Size:264K  sino
 sm9926dsk.pdf

SM9926DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 20V/8A, D2 D2 RDS(ON) =20m (max.) @ VGS = 4.5V RDS(ON) =29m (max.) @ VGS = 2.5V S1 G1 Reliable and Rugged S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP 8 (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Portabl

 7.1. Size:382K  taiwansemi
 tsm9926dcs.pdf

TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 30 @ VGS = 4.5V 6.0 4. Gate 2 5. Drain 2 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 8.1. Size:560K  silicon standard
 ssm9926gm.pdf

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro

 8.2. Size:264K  silicon standard
 ssm9926o.pdf

SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l

 8.3. Size:242K  silicon standard
 ssm9926tgo.pdf

SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

 8.4. Size:144K  silicon standard
 ssm9926em.pdf

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current I 6A D G2 S2 Surface-mount package G1 SO-8 S1 Description Power MOSFETs from Silicon Standard provide the D1 D2 designer with the best combination of fast switching, G1 G2 ruggedized device design, ultra low on-resistance a

 8.5. Size:146K  silicon standard
 ssm9926geo.pdf

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista

 8.6. Size:3308K  huashuo
 hsm9926.pdf

HSM9926 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSM9926 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 6 A The HSM9926 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 8.7. Size:2630K  cn sps
 sm9926.pdf

SM9926 Dual N-Channel Enhancement-Mode MOSFET(20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 28 @ VGS = 4.5V, ID=6A 20V 6A 40 @ VGS =2.5V,ID=5.2A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Lead free product is acquired. 4 Surface mount Package. 5 RoHS Compliant. Pin 1 Source1 Pin 2 Ga