SM9989DSO Todos los transistores

 

SM9989DSO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM9989DSO
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
   Paquete / Cubierta: TSSOP8

 Búsqueda de reemplazo de MOSFET SM9989DSO

 

SM9989DSO Datasheet (PDF)

 ..1. Size:257K  sino
sm9989dso.pdf

SM9989DSO
SM9989DSO

SM9989DSODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDS2 20V/7.5A,S2G2RDS(ON)= 14.5m (max.) @ VGS= 4.5VRDS(ON)= 15.5m (max.) @ VGS= 4VDS1RDS(ON)= 17m (max.) @ VGS= 3.1VS1G1RDS(ON)= 20m (max.) @ VGS= 2.5V Reliable and RuggedTop View of TSSOP-8 ESD Protected(1) (8) Lead Free and Green Devices AvailableD D (RoHS Compliant)(4) (5)G1

 6.1. Size:273K  sino
sm9989dsqg.pdf

SM9989DSO
SM9989DSO

SM9989DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12.4A,S2S2RDS(ON)= 15m (Max.) @ VGS=4.5VG2RDS(ON)= 16m (Max.) @ VGS=4VS1RDS(ON)= 18.5m (Max.) @ VGS=3.1VS1G1RDS(ON)= 22m (Max.) @ VGS=2.5V Reliable and RuggedTop View of DFN2x5-6 Lead Free and Green Devices Available(RoHS Compliant)D D ESD Protection(3) (4)G1G2Applicati

 6.2. Size:229K  sino
sm9989dsqa.pdf

SM9989DSO
SM9989DSO

SM9989DSQA Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD2 20V/10A,D1D2D1RDS(ON)= 14m (max.) @ VGS= 4.5VRDS(ON)= 15m (max.) @ VGS= 4VG2S2RDS(ON)= 17.5m (max.) @ VGS= 3.1V S1G1RDS(ON)= 21m (max.) @ VGS= 2.5VTop View of DFN3x3C-8 100% UIS + Rg Tested Reliable and Rugged(8) (7) (6) (5) Lead Free and Green Devices Available D1 D1 D2 D2 (RoHS

 9.1. Size:267K  sino
sm9988co.pdf

SM9989DSO
SM9989DSO

SM9988CODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDS2S2 20V/7A,G2RDS(ON)=16m (typ.) @ VGS=4.5VDRDS(ON)=19m (typ.) @ VGS=2.5VS1S1G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSSOP 8(RoHS Compliant)(1) (8) ESD Protection D D(4) (5)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equ

 9.2. Size:673K  globaltech semi
gsm9987.pdf

SM9989DSO
SM9989DSO

GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit

 9.3. Size:202K  silicon standard
ssm9985gm.pdf

SM9989DSO
SM9989DSO

SSM9985GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40VDFast Switching Speed DD RDS(ON) 15mSurface Mount Package DID 10AGSSSO-8SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

 9.4. Size:192K  silicon standard
ssm9987gh.pdf

SM9989DSO
SM9989DSO

SSM9987GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 80VDRDS(ON) 90mLow Gate Charge Single Drive Requirement ID 15AGFast Switching Performance SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. GDSprovide the designer with the best combination of fast switching, TO-252(H)ruggedized device design, low on-resistance and c

 9.5. Size:226K  silicon standard
ssm9980m.pdf

SM9989DSO
SM9989DSO

SSM9980M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 80VD2 DSSD2D1Lower gate charge R 52mDS(ON)D1Fast switching characteristics ID 4.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

 9.6. Size:764K  silicon standard
ssm9980gh ssm9980gj.pdf

SM9989DSO
SM9989DSO

SSM9980GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9980Gx acheives fast switching performanceBVDSS 80Vwith low gate charge without a complex drive circuit. It isRDS(ON) 45msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 21AD The SSM9980GH is in a TO-252 package, which isPb-free; RoHS-

 9.7. Size:192K  silicon standard
ssm9987gm.pdf

SM9989DSO
SM9989DSO

SSM9987GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D2D2Low Gate Charge BVDSS 80VD1D1Single Drive Requirement RDS(ON) 90mG2Surface Mount Package S2ID 3.5AG1SO-8 S1DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2D1provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi

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