SM9435PSK Datasheet. Equivalente

 ..1. Size:163K  sino
 sm9435psk.pdf

SM9435PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-5.4A , D D RDS(ON)=58m (max.) @ VGS=-10V RDS(ON)=86m (max.) @ VGS=-4.5V S S 100% UIS Tested S G Reliable and Rugged Top View of SOP - 8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD ESD Protection Applications (4) G Power Management in Notebook Comp

 8.1. Size:226K  taiwansemi
 tsm9435cs.pdf

TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m ) ID (A) 3. Source 60 @ VGS = 10V -5.3 4. Gate -30 5, 6, 7, 8. Drain 90 @ VGS = 4.5V -4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Swit

 8.2. Size:955K  globaltech semi
 gsm9435s.pdf

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:951K  globaltech semi
 gsm9435ws.pdf

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 8.4. Size:522K  silicon standard
 ssm9435gm.pdf

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9435GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as battery management and general high-side switch circuits. I -5.3A D The SSM9435GM is supplied in an RoHS-compliant Pb-free;

 8.5. Size:200K  silicon standard
 ssm9435k.pdf

SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D Low on-resistance R 50m DS(ON) S Fast switching ID -6A D G SOT-223 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Parameter Ratin

 8.6. Size:293K  silicon standard
 ssm9435gh ssm9435gj.pdf

SSM9435GH,J P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 50m DS(ON) Fast switching ID -20A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM9435H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC

 8.7. Size:424K  jsmsemi
 jsm9435.pdf

JSM9435 P-Channel Enhancement Mode Power MOSFET SOP-8 Description SD 1 8 The 9435 uses advanced trench technology to provide S D 2 7 excellent RDS(ON), low gate charge and operation with gate SD 3 6 G D 4 5 voltages as low as 4.5V. Top View Equivalent Cir cuit General Features S VDS = -30V = -4.2A RDS(ON)

 8.8. Size:2640K  cn sps
 sm9435.pdf

SM9435 P-Channel Enhancement-Mode MOSFET(-30V, -5.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = -10 V, ID=-5.3A -30V -5.3A 90 @ VGS = -4.5V, ID=-4.2A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot-Through FOM. 5 RoHS

 8.9. Size:842K  cn vbsemi
 ssm9435gm.pdf

SSM9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top