SM9435PSK Todos los transistores

 

SM9435PSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM9435PSK
   Código: 9435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET SM9435PSK

 

SM9435PSK Datasheet (PDF)

 ..1. Size:163K  sino
sm9435psk.pdf

SM9435PSK
SM9435PSK

SM9435PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-5.4A , DD RDS(ON)=58m(max.) @ VGS=-10V RDS(ON)=86m(max.) @ VGS=-4.5VSS 100% UIS TestedSG Reliable and RuggedTop View of SOP - 8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDD ESD ProtectionApplications(4)G Power Management in Notebook Comp

 8.1. Size:226K  taiwansemi
tsm9435cs.pdf

SM9435PSK
SM9435PSK

TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 60 @ VGS = 10V -5.3 4. Gate -30 5, 6, 7, 8. Drain 90 @ VGS = 4.5V -4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Swit

 8.2. Size:955K  globaltech semi
gsm9435s.pdf

SM9435PSK
SM9435PSK

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.3. Size:951K  globaltech semi
gsm9435ws.pdf

SM9435PSK
SM9435PSK

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 8.4. Size:522K  silicon standard
ssm9435gm.pdf

SM9435PSK
SM9435PSK

SSM9435GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9435GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as batterymanagement and general high-side switch circuits.I -5.3AD The SSM9435GM is supplied in an RoHS-compliantPb-free;

 8.5. Size:200K  silicon standard
ssm9435k.pdf

SM9435PSK
SM9435PSK

SSM9435KP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDLow on-resistance R 50mDS(ON)SFast switching ID -6ADGSOT-223DescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Parameter Ratin

 8.6. Size:293K  silicon standard
ssm9435gh ssm9435gj.pdf

SM9435PSK
SM9435PSK

SSM9435GH,JP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 50mDS(ON)Fast switching ID -20AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM9435H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC

 8.7. Size:424K  jsmsemi
jsm9435.pdf

SM9435PSK
SM9435PSK

JSM9435P-Channel Enhancement Mode Power MOSFET SOP-8Description SD1 8The 9435 uses advanced trench technology to provide S D2 7excellent RDS(ON), low gate charge and operation with gate SD3 6G D4 5voltages as low as 4.5V. Top ViewEquivalent Cir cuitGeneral Features S VDS = -30V = -4.2A RDS(ON)

 8.8. Size:2640K  cn sps
sm9435.pdf

SM9435PSK
SM9435PSK

SM9435 P-Channel Enhancement-Mode MOSFET(-30V, -5.3A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = -10 V, ID=-5.3A -30V -5.3A 90 @ VGS = -4.5V, ID=-4.2A Features 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. 3Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot-Through FOM. 5RoHS

 8.9. Size:842K  cn vbsemi
ssm9435gm.pdf

SM9435PSK
SM9435PSK

SSM9435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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