SM1A33PSU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM1A33PSU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 113 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 268 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET SM1A33PSU
SM1A33PSU Datasheet (PDF)
sm1a33psu.pdf
SM1A33PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-38A,Drain 4 RDS(ON)= 39m(max.) @ VGS=-10V3 Source RDS(ON)= 49m(max.) @ VGS=-4.5V2 100% UIS+Rg Tested1 Gate Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for Industrial DC / DC Converters.SP
sm1a30nsu.pdf
SM1A30NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/18A, D RDS(ON)= 70m (max.) @ VGS= 10VS RDS(ON)= 80m (max.) @ VGS= 4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. For LED Backlight DC-DC Boost ConverterS So
sm1a32nsu.pdf
SM1A32NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/34A,Drain 4 RDS(ON)= 29m(max.) @ VGS= 10V RDS(ON)= 34m(max.) @ VGS= 4.5V 3 Source2 Reliable and Rugged1 Gate Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3DApplicationsG For telecom PSE solution.SN-Channel MOSFETOrdering and Marking InformationPac
sm1a35psu.pdf
SM1A35PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-18A,Drain 4 RDS(ON)= 90m(max.) @ VGS=-10V3 SourceRDS(ON)= 102m(max.) @ VGS=-4.5V 21 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) 100% UIS TestedD ESD Protection HBM ESD protection level pass 8KVNote : The diode connected betw
sm1a30nsk.pdf
SM1A30NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/5A, D RDS(ON)= 70m (Max.) @ VGS=10V RDS(ON)= 80m (Max.) @ VGS=4.5VSSS Reliable and RuggedG Lead Free and Green Devices Available Top View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D DDApplications(4)G Power Management in DC/DC Converter. For LED Backlight DC-DC boost converter
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918