SM4401PSKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM4401PSKPP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-55A,DDD RDS(ON)= 8m (max.) @ VGS=-20VD RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5VGPin 1SS HBM ESD capability level of 8KV typicalSDFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 )DDDD Lead Free and Green Devices Available (RoHSCompliant)

SM4401PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-16.7A,RDS(ON)= 8.5m (max.) @ VGS=-20VSRDS(ON)= 10m (max.) @ VGS=-10VSSRDS(ON)= 16m (max.) @ VGS=-4.5VGTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDD HBM ESD protection level pass 8KVNote : The diode connected betw

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

TSM4404 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 30 @ VGS = 10V 8.5 4. Gate 5, 6, 7, 8. Drain 30 33 @ VGS = 4.5V 8.5 48 @ VGS = 2.5V 5 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC

SM4403PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-11A,RDS(ON)= 18m (max.) @ VGS=-10VSRDS(ON)= 27m (max.) @ VGS=-4.5VSS Reliable and RuggedGTop View of SOP-8 Lead Free and Green Devices Available(RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in LCD TV Inverter.S S S(1, 2, 3)P-Channel MOSFETOr

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-8A,RDS(ON)=34m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=-1.8V Super high density cell design for extremely These devices are par

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

SM4405PRL-30V /-6A Single P Power MOSFET C P03C P -30V /-6A Single P Power MOSFET 6P03CGeneral Description -30 VV DS-30V /-6A Single P Power MOSFET 59.5 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 93.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Teste

SM4404BPRL30V /10A Complementary NP Power MOSFET C N03C N 30V /10A Complementary NP Power MOSFET 9N03CGeneral Description 30 VV DS30V /10A Complementary NP Power MOSFET 14.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 18.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 10 AIDTape and reelPart ID Package Type Markinginfomation100% UIS