IRF7526D1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7526D1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 87 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET IRF7526D1
IRF7526D1 Datasheet (PDF)
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irf7526d1.pdf
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irf7523d1.pdf
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irf7524d1gpbf.pdf
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irf7521d1pbf.pdf
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irf7524d1.pdf
PD -91648CPRELIMINARYIRF7524D1FETKYTM MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 P-Channel HEXFET A K Low VF Schottky Rectifier3 6S DRDS(on) = 0.27 Generation 5 Technology45TM G D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky d
irf7521d1.pdf
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irf7523d1pbf.pdf
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irf7524d1pbf.pdf
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Otros transistores... NCEP85T16D , NCEP85T25D , NCEP85T25T , NCEP85T35T , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , TK10A60D , IRF7555 , IRF7601 , IRF7603 , IRF7604 , IRF7606 , IRF7663 , IRF7805 , IRF7807 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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