SM2305PSA Todos los transistores

 

SM2305PSA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM2305PSA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.8 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm

Encapsulados: SOT23

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SM2305PSA datasheet

 ..1. Size:166K  sino
sm2305psa.pdf pdf_icon

SM2305PSA

SM2305PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.9A , D RDS(ON)=43m (Max.) @ VGS=-4.5V S RDS(ON)=58m (Max.) @ VGS=-2.5V G RDS(ON)=88m (Max.) @ VGS=-1.8V Top View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Po

 8.1. Size:378K  taiwansemi
tsm2305cx.pdf pdf_icon

SM2305PSA

TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 55 @ VGS =-4.5V -3.2 80 @ VGS =-2.5V -2.7 -20 130 @ VGS =-1.8V -2.0 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Battery Management High Spe

 8.2. Size:313K  silicon standard
ssm2305gn.pdf pdf_icon

SM2305PSA

SSM2305GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 65m DS(ON) Fast switching ID -4.2A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2305GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as

 8.3. Size:312K  silicon standard
ssm2305agn.pdf pdf_icon

SM2305PSA

SSM2305AGN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 80m DS(ON) Fast switching ID -3.2A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2305AGN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such a

Otros transistores... SM4027PSU , SM4050PSK , SM4050PSV , SM4301PSK , SM4301PSKP , SM4301PSU , SM4301PSUC , SM2303PSA , 8205A , SM2307PSA , SM2309PSA , SM2311PSA , SM2313PSA , SM2315PSA , SM2317PSA , SM2319PSAN , SM2321PSA .

History: SM7340EHKP | SM3303PSQG | SM2307PSA | SM1A27PSUB | SM2416NSAN

 

 

 


History: SM7340EHKP | SM3303PSQG | SM2307PSA | SM1A27PSUB | SM2416NSAN

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