SM2331PSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM2331PSA
Código: B31*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 7 nC
Tiempo de subida (tr): 13.6 nS
Conductancia de drenaje-sustrato (Cd): 108 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SM2331PSA
SM2331PSA Datasheet (PDF)
sm2331psa.pdf
SM2331PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.9A, DRDS(ON)= 60m (Max.) @ VGS=-4.5VSRDS(ON)= 90m (Max.) @ VGS=-2.5VGRDS(ON)=150m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powere
sm2337psa.pdf
SM2337PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.5A,RDS(ON) = 34m (max.) @ VGS =-4.5VDRDS(ON) = 50m (max.) @ VGS =-2.5VSRDS(ON) = 75m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour
sm2333psa.pdf
SM2333PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-6.3A,DRDS(ON) = 26m (max.) @ VGS =-4.5VSRDS(ON) = 33m (max.) @ VGS =-2.5VGRDS(ON) = 40m (max.) @ VGS =-1.8VRDS(ON) = 60m (max.) @ VGS =-1.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Comput
sm2335psa.pdf
SM2335PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.1A,DRDS(ON) = 22m (max.) @ VGS =-4.5VRDS(ON) = 30m (max.) @ VGS =-2.5VSRDS(ON) = 45m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour
gsm2330.pdf
GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2336a.pdf
GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p
gsm2330a.pdf
GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2333a.pdf
GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis
gsm2337a.pdf
GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m@VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
