SM2331PSA Todos los transistores

 ..1. Size:259K  sino
 sm2331psa.pdf

SM2331PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.9A, D RDS(ON)= 60m (Max.) @ VGS=-4.5V S RDS(ON)= 90m (Max.) @ VGS=-2.5V G RDS(ON)=150m (Max.) @ VGS=-1.8V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powere

 9.1. Size:257K  sino
 sm2337psa.pdf

SM2337PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-5.5A, RDS(ON) = 34m (max.) @ VGS =-4.5V D RDS(ON) = 50m (max.) @ VGS =-2.5V S RDS(ON) = 75m (max.) @ VGS =-1.8V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) HBM ESD protection level pass 2KV D Note The diode connected between the gate and sour

 9.2. Size:257K  sino
 sm2333psa.pdf

SM2333PSA P-Channel Enhancement Mode MOSFET Features Pin Description -12V/-6.3A, D RDS(ON) = 26m (max.) @ VGS =-4.5V S RDS(ON) = 33m (max.) @ VGS =-2.5V G RDS(ON) = 40m (max.) @ VGS =-1.8V RDS(ON) = 60m (max.) @ VGS =-1.5V Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Comput

 9.3. Size:257K  sino
 sm2335psa.pdf

SM2335PSA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-7.1A, D RDS(ON) = 22m (max.) @ VGS =-4.5V RDS(ON) = 30m (max.) @ VGS =-2.5V S RDS(ON) = 45m (max.) @ VGS =-1.8V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) HBM ESD protection level pass 2KV D Note The diode connected between the gate and sour

 9.4. Size:832K  globaltech semi
 gsm2330.pdf

 9.5. Size:892K  globaltech semi
 gsm2336a.pdf

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m @VGS=1.8V Super high density cell design for extremely These devices are p

 9.6. Size:832K  globaltech semi
 gsm2330a.pdf

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.7. Size:903K  globaltech semi
 gsm2333a.pdf

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m @VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

 9.8. Size:860K  globaltech semi
 gsm2337a.pdf

GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m @VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi