SM2331PSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM2331PSA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.9A, DRDS(ON)= 60m (Max.) @ VGS=-4.5VSRDS(ON)= 90m (Max.) @ VGS=-2.5VGRDS(ON)=150m (Max.) @ VGS=-1.8VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery Powere

SM2337PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.5A,RDS(ON) = 34m (max.) @ VGS =-4.5VDRDS(ON) = 50m (max.) @ VGS =-2.5VSRDS(ON) = 75m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour

SM2333PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-6.3A,DRDS(ON) = 26m (max.) @ VGS =-4.5VSRDS(ON) = 33m (max.) @ VGS =-2.5VGRDS(ON) = 40m (max.) @ VGS =-1.8VRDS(ON) = 60m (max.) @ VGS =-1.5VTop View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Comput

SM2335PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.1A,DRDS(ON) = 22m (max.) @ VGS =-4.5VRDS(ON) = 30m (max.) @ VGS =-2.5VSRDS(ON) = 45m (max.) @ VGS =-1.8VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant) HBM ESD protection level pass 2KV DNote : The diode connected between the gate andsour

GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis

GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m@VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi