SM4309PSKP Todos los transistores

 

SM4309PSKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM4309PSKP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 1130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: DFN5X6-8

 Búsqueda de reemplazo de MOSFET SM4309PSKP

 

SM4309PSKP Datasheet (PDF)

 ..1. Size:259K  sino
sm4309pskp.pdf

SM4309PSKP
SM4309PSKP

SM4309PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-100A,DDRDS(ON) = 3.6m (max.) @ VGS =-10V DDRDS(ON) = 6.8m (max.) @ VGS =-4.5V 100% UIS + Rg TestedGPin 1SS Reliable and Rugged SDFN5x6A-8_EP Lead Free and Green Devices Available(RoHS Compliant)( 5,6,7,8 ) HBM ESD protection level pass 8KV DDDDNote : The diode connected between t

 5.1. Size:236K  sino
sm4309psk.pdf

SM4309PSKP
SM4309PSKP

SM4309PSK P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-23.8A,DDDRDS(ON) = 4.9m (max.) @ VGS =-10VDRDS(ON) = 8.2m (max.) @ VGS =-4.5V 100% UIS + Rg TestedSSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 ) HBM ESD protection level pass 8KVDDDDNote : The diode connected between

 9.1. Size:291K  sino
sm4307pskp.pdf

SM4309PSKP
SM4309PSKP

SM4307PSKP P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-34A,DDRDS(ON) = 18m (max.) @ VGS =-10VRDS(ON) = 30m (max.) @ VGS =-4.5VGSPin 1 Reliable and Rugged SS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Pow

 9.2. Size:263K  sino
sm4305psk.pdf

SM4309PSKP
SM4309PSKP

SM4305PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD -30V/-13A,DRDS(ON) =12m (max.) @ VGS =-10VRDS(ON) =17m (max.) @ VGS =-6VSSRDS(ON) =21m (max.) @ VGS =-4.5VSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D D(4)ApplicationsG Power Management in Notebook Computer,Po

 9.3. Size:262K  sino
sm4301pskp.pdf

SM4309PSKP
SM4309PSKP

SM4301PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-90A,DDDRDS(ON) =6.4m (max.) @ VGS =-10VDRDS(ON) =12m (max.) @ VGS =-4.5V 100% UIS + Rg TestedGPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D D HBM ESD protection level of 2.6KV typical(4)ApplicationsG Pow

 9.4. Size:269K  sino
sm4301psu sm4301psuc.pdf

SM4309PSKP
SM4309PSKP

SM4301PSU/SM4301PSUCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-88A,DRDS(ON)= 6.5m (max.) @ VGS=-10VRDS(ON)= 11.5m (max.) @ VGS=-4.5VS Reliable and RuggedG Lead Free and Green Devices Available (RoHSCompliant)Top View of TO-252-2 Top View of TO-251S HBM ESD capability level of 2.6KV typicalD 100% UIS + Rg TestedNote : The diode connected b

 9.5. Size:290K  sino
sm4305pskp.pdf

SM4309PSKP
SM4309PSKP

SM4305PSKP P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-42A,DDRDS(ON) = 12m (max.) @ VGS =-10VRDS(ON) = 17m (max.) @ VGS =-6VGS Pin 1RDS(ON) = 21m (max.) @ VGS =-4.5VSS Reliable and RuggedDFN5x6-8 Lead Free and Green Devices Available( 5,6,7,8 )D D D D(RoHS Compliant)(4)ApplicationsG Power Management in Notebook Computer,P

 9.6. Size:165K  sino
sm4303psuc.pdf

SM4309PSKP
SM4309PSKP

SM4303PSUC P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-68A,RDS(ON) = 9m(max.) @ VGS =-10VRDS(ON) = 15m(max.) @ VGS =-4.5V HBM ESD protection level pass 8KV 100% UIS + Rg Tested Reliable and RuggedTop View of TO-251S Lead Free and Green Devices AvailableD (RoHS Compliant)Note : The diode connected between the gate andsource serves only as p

 9.7. Size:264K  sino
sm4303psk.pdf

SM4309PSKP
SM4309PSKP

SM4303PSK P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-17.6A,DDDRDS(ON) =9m (max.) @ VGS =-10VDRDS(ON) =15m (max.) @ VGS =-4.5V Reliable and RuggedSSS Lead Free and Green Devices AvailableG (RoHS Compliant)Top View of SOP-8 HBM ESD protection level pass 8KV( 5,6,7,8 )DDDDNote : The diode connected between the gate andsource serves

 9.8. Size:263K  sino
sm4307psk.pdf

SM4309PSKP
SM4309PSKP

SM4307PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD -30V/-11A,DRDS(ON) = 18m (max.) @ VGS =-10VRDS(ON) = 30m (max.) @ VGS =-4.5VSS Reliable and Rugged SG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Po

 9.9. Size:236K  sino
sm4301psk.pdf

SM4309PSKP
SM4309PSKP

SM4301PSK P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-17.5A,DDDRDS(ON) =6.8m (max.) @ VGS =-10VDRDS(ON) =13m (max.) @ VGS =-4.5V 100% UIS + Rg TestedSSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D HBM ESD protection level of 2.6KV typicalNote : The diode connected

 9.10. Size:263K  sino
sm4303psu.pdf

SM4309PSKP
SM4309PSKP

SM4303PSU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-68A,Drain 4RDS(ON) = 9m (max.) @ VGS =-10VRDS(ON) = 15m (max.) @ VGS =-4.5V 3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3 HBM ESD protection level pass 8KVDNote : The diode connected between the gate andsource serves only

 9.11. Size:767K  cn sps
sm4306prl.pdf

SM4309PSKP
SM4309PSKP

SM4306PRL30V /13A Single N Power MOSFET C N03C N 30V /13A Single N Power MOSFET 13N03CGeneral Description 30 VV DS30V /13A Single N Power MOSFET 10.9 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 17.1 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 13 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

 9.12. Size:898K  cn vbsemi
sm4307pskpc.pdf

SM4309PSKP
SM4309PSKP

SM4307PSKPCwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD

 9.13. Size:855K  cn vbsemi
sm4305pskc.pdf

SM4309PSKP
SM4309PSKP

SM4305PSKCwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

 9.14. Size:827K  cn vbsemi
sm4307pskc-trg.pdf

SM4309PSKP
SM4309PSKP

SM4307PSKC-TRGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Deskt

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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