SM3202PSQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3202PSQA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 9.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: DFN3X2A-8

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SM3202PSQA Datasheet (PDF)

..1. Size:154K sino
sm3202psqa.pdf

SM3202PSQAP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-9.6A,S5D6RDS(ON) = 18m(max.) @ VGS =-4.5VD7RDS(ON) = 25m(max.) @ VGS =-2.5VD8G4RDS(ON) = 38m(max.) @ VGS =-1.8VD3RDS(ON) = 60m(max.) @ VGS =-1.5V D2D1 100% UIS + Rg TestedDFN3x2A-8 Reliable and Rugged Lead Free and Green Devices Available(1, 2, 3, 6, 7,8)DDDD DD(Ro

8.1. Size:453K huashuo
hsm3202.pdf

HSM3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3202 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7.8 A The HSM3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

9.1. Size:151K sino
sm3201psqa.pdf

SM3201PSQAP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS5D6 -30V/-7.9A,D7RDS(ON) = 27m(max.) @ VGS =-10V D8G4RDS(ON) = 42m(max.) @ VGS =-4.5VD3D2 100% UIS + Rg TestedD1 Reliable and RuggedDFN3x2A-8 Lead Free and Green Devices Available(1, 2, 3, 6, 7,8)(RoHS Compliant)DDDD DDApplications(4)G Power Management in Notebook Computer,

9.2. Size:194K sino
sm3203csq.pdf

SM3203CSQ Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N ChannelD2D220V/8A,D1RDS(ON) = 18m (max.) @ VGS = 10V D1G2RDS(ON) = 22m (max.) @ VGS = 4.5VS2G1RDS(ON) = 32.5m (max.) @ VGS = 2.5VS1RDS(ON) = 65m (max.) @ VGS = 1.8VDFN3x2B-8 P Channel-20V/-4.5A,(8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 60m (max.) @ VGS =-4.5

9.3. Size:2068K huashuo
hsm3206.pdf

HSM3206 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3206 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 6 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3206 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

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