SM2605PSC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SM2605PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-7.5A,SDRDS(ON) = 30m(max.) @ VGS =-10VDGRDS(ON) = 45m(max.) @ VGS =-4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powe

SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

SM2607CSC Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 20V/5A,D2 RDS(ON)=38m(max.) @ VGS=4.5VS1D1G2 RDS(ON)=54m(max.) @ VGS=2.5VS2G1 RDS(ON)=85m(max.) @ VGS=1.8V P-ChannelTop View of SOT-23-6 -20V/-3.3A, RDS(ON)=85m(max.) @ VGS=-4.5V(4)D2(6)D1RDS(ON)=120m(max.) @ VGS=-2.5VRDS(ON)=210m(max.)

SM2603PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4.3A,SRDS(ON)= 48m (max.) @ VGS=-4.5VDDRDS(ON)= 68m (max.) @ VGS=-2.5VGDRDS(ON)= 100m (max.) @ VGS=-1.8VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,Portable Equip

SM2602NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6.2A,SDRDS(ON)= 24m (max.) @ VGS=4.5VDGRDS(ON)= 32m (max.) @ VGS=2.5VDD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystem

SM2601PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-7.3A ,SDRDS(ON)=26m (Max.) @ VGS=-4.5VDGDRDS(ON)=38m (Max.) @ VGS=-2.5VDRDS(ON)=58m (Max.) @ VGS=-1.8VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Computer,

SM2604NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SRDS(ON)= 24m(max.) @ VGS=10VDDGRDS(ON)= 32.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

SM2608NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/7.4A,SDRDS(ON)= 17m(max.) @ VGS=10VDGRDS(ON)= 21.5m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredS

SM2609PSCP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, SDRDS(ON) = 85m(max.) @ VGS =-10VDGDRDS(ON) = 135m(max.) @ VGS =-4.5VD Reliable and RuggedTop View of SOT-23-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DD DDApplications(3)G Power Management in Notebook Computer,Portable Equipment and Battery Powere

CSM260 N PD TC=25 250 W 2.0 W/ ID VGS=10V,TC=25 35 A ID VGS=10V,TC=100 28 A IDM 140 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 48 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=28A 0.

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe

SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package

SSM2603YP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -20VSDSmall package outline R 65mDS(ON)DSurface-mount device ID - 4.2AGDSOT-26DDescriptionDThese power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistancein an extremely efficient and cost-effective device.GThe SOT-2