SM4310PSK Todos los transistores

 

SM4310PSK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM4310PSK

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOP8

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SM4310PSK datasheet

 ..1. Size:262K  sino
sm4310psk.pdf pdf_icon

SM4310PSK

SM4310PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D D -30V/-9.3A, D RDS(ON) = 24m (max.) @ VGS =-10V RDS(ON) = 38m (max.) @ VGS =-4.5V S S Reliable and Rugged S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in Notebook Computer, Portable Equipment and Battery P

 9.1. Size:294K  sino
sm4311pskp.pdf pdf_icon

SM4310PSK

SM4311PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-100A, D D RDS(ON) =2.8m (max.) @ VGS =-10V D D RDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and Rugged G Pin 1 S S Lead Free and Green Devices Available S DFN5x6-8 (RoHS Compliant) HBM ESD Capability level of 6.6KV typical ( 5,6,7,8 ) D D D D Note The diode connected between the gate and sour

 9.2. Size:510K  huashuo
hsm4313.pdf pdf_icon

SM4310PSK

HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P- V -40 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),max converter applications. I -6.5 A D The HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

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History: MXP1006AT | TMAN12N80AZ | RRS130N03 | IRLR3105TR | STD2NK90ZT4 | AO3422A

 

 

 

 

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