SM4311PSKP Todos los transistores

 

SM4311PSKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM4311PSKP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 1560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: DFN5X6-8

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SM4311PSKP Datasheet (PDF)

 ..1. Size:294K  sino
sm4311pskp.pdf

SM4311PSKP
SM4311PSKP

SM4311PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-100A,DDRDS(ON) =2.8m (max.) @ VGS =-10V DDRDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and RuggedGPin 1SS Lead Free and Green Devices Available SDFN5x6-8(RoHS Compliant) HBM ESD Capability level of 6.6KV typical( 5,6,7,8 )D D D DNote : The diode connected between the gate andsour

 9.1. Size:262K  sino
sm4310psk.pdf

SM4311PSKP
SM4311PSKP

SM4310PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD -30V/-9.3A,DRDS(ON) = 24m (max.) @ VGS =-10VRDS(ON) = 38m (max.) @ VGS =-4.5VSS Reliable and Rugged SG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery P

 9.2. Size:510K  huashuo
hsm4313.pdf

SM4311PSKP
SM4311PSKP

HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P-V -40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),maxconverter applications. I -6.5 A DThe HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

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