SM2621PSC Todos los transistores

 ..1. Size:162K  sino
 sm2617psc sm2621psc.pdf

SM2621PSC P-Channel Enhancement Mode MOSFET Features Pin Description S -30V/-5.1A , D D G RDS(ON)= 54m (Max.) @ VGS=-10V D RDS(ON)= 65m (Max.) @ VGS=-4.5V D RDS(ON)= 92m (Max.) @ VGS=-2.5V Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) (RoHS Compliant) DD DD Applications (3)G Power Management in Notebook Comput

 9.1. Size:2744K  1
 jsm2622.pdf

JSM2622 N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET D Description The JSM2622 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) Typ =4.5m @ VGS=10V 1 8 RDS(ON) =5.0m @ VGS=4.5V Typ

 9.2. Size:200K  sino
 sm2620csc.pdf

SM2620CSC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 30V/4.9A, D2 S1 RDS(ON)=39m (max.) @ VGS=10V D1 G2 S2 RDS(ON)=68m (max.) @ VGS=4.5V G1 P-Channel Top View of SOT-23-6 -30V/-3A, RDS(ON)=100m (max.) @ VGS=-10V (4)D2 (6)D1 RDS(ON)=170m (max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Availabl

 9.3. Size:2140K  huashuo
 hsm2627.pdf

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l