APM4500AK
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM4500AK
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 8(4.3)
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 160(125)
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026(0.09)
Ohm
Paquete / Cubierta:
SOP8
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APM4500AK
Datasheet (PDF)
..1. Size:240K anpec
apm4500ak.pdf 
APM4500AKDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1D1 N-ChannelD2 D2 20V/8A, RDS(ON) =22m(typ.) @ VGS = 4.5VS1 RDS(ON) =30m(typ.) @ VGS = 2.5VG1S2 P-ChannelG2-20V/-4.3A,Top View of SOP - 8 RDS(ON) =80m(typ.) @ VGS =-4.5V(8) (7)(6) (5) RDS(ON) =105m(typ.) @ VGS =-2.5VD1 D1D2 D2 Super High Dense Cell Des
..2. Size:302K sino
apm4500ak.pdf
APM4500AK Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1D1 N-Channel D2D2 20V/8A, RDS(ON) =22m (typ.) @ VGS = 4.5VS1 RDS(ON) =30m (typ.) @ VGS = 2.5V G1S2G2 P-Channel-20V/-4.3A,Top View of SOP 8 RDS(ON) =80m (typ.) @ VGS =-4.5V(8) (7)(6) (5) RDS(ON) =105m (typ.) @ VGS =-2.5VD1 D1D2 D2 Reliable and Rugged Lead Free and Gr
7.1. Size:342K anpec
apm4500.pdf
APM4500Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D120V/8A , RDS(ON)=22m(typ.) @ VGS=4.5VG1 2 7 D1RDS(ON)=30m(typ.) @ VGS=2.5V S2 3 6 D2G2 4 5 D2 P-Channel-20V/-4.3A , RDS(ON)=80m(typ.) @ VGS=-4.5VSO-8 RDS(ON)=105m(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely LowD1 D1
7.2. Size:703K anpec
apm4500k.pdf
APM4500Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D120V/8A , RDS(ON)=22m(typ.) @ VGS=4.5VG1 2 7 D1RDS(ON)=30m(typ.) @ VGS=2.5V S2 3 6 D2G2 4 5 D2 P-Channel-20V/-4.3A , RDS(ON)=80m(typ.) @ VGS=-4.5VSO-8 RDS(ON)=105m(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely LowD1 D1
9.1. Size:264K anpec
apm4568k.pdf
APM4568KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel40V/6.5A,RDS(ON) = 20m (typ.) @ VGS = 10VRDS(ON) = 28m (typ.) @ VGS = 4.5V P-Channel-40V/-5A,Top View of SOP - 8RDS(ON) = 35m (typ.) @ VGS =-10V(3)(8) (7)RDS(ON) = 48m (typ.) @ VGS =-4.5VS2D1 D1 Super High Dense Cell Design Reliable and Rugged(4) Lead Free Av
9.2. Size:241K anpec
apm4550j.pdf
APM4550JDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel30V/8A,RDS(ON) = 20m (typ.) @ VGS = 10VRDS(ON) = 30m (typ.) @ VGS = 4.5V P-ChannelTop View of DIP - 8-30V/-7A,RDS(ON) = 40m (typ.) @ VGS = -10VD1 D1 S2RDS(ON) = 62m (typ.) @ VGS = -4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compl
9.3. Size:265K anpec
apm4552k.pdf
APM4552KDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1 D2 30V/7A,D2 RDS(ON) = 23m(typ.) @ VGS = 10V RDS(ON) = 34m(typ.) @ VGS = 4.5VS1 P-ChannelG1-30V/-5A, S2G2 RDS(ON) = 46m(typ.) @ VGS =-10V RDS(ON) = 62m(typ.) @ VGS =-4.5V Top View of SOP - 8 Super High Dense Cell Design(6) (5)(8) (7)D2 D2D1 D1
9.4. Size:180K anpec
apm4536k.pdf
APM4536KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelD1D130V/5A, D2D2RDS(ON) =35m(typ.) @ VGS = 10VS1RDS(ON) =45m(typ.) @ VGS = 4.5VG1S2 P-ChannelG2-30V/-5A,Top View of SOP - 8RDS(ON) =40m(typ.) @ VGS =-10VRDS(ON) =55m(typ.) @ VGS =-4.5V(8) (7) (3)D1 D1 S2 Super High Dense Cell
9.5. Size:234K anpec
apm4532.pdf
APM4532Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/5A, RDS(ON)=35m(typ.) @ VGS=10VG1 2 7 D1RDS(ON)=60m(typ.) @ VGS=4.5V S2 3 6 D2G2 4 5 D2 P-Channel-30V/-3.5A, RDS(ON)=85m(typ.) @ VGS=-10VSO-8 RDS(ON)=135m(typ.) @ VGS=-4.5V Super High Dense Cell Design for ExtremelyD1 D1S2Lo
9.6. Size:271K anpec
apm4534k.pdf
APM4534KDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.5A RDS(ON) = 65m(typ.) @ VGS = 10V RDS(ON) = 90m(typ.) @ VGS = 4.5V P-Channel-30V/-3.3A, RDS(ON) = 110m(typ.) @ VGS = -10V RDS(ON) = 175m(typ.) @ VGS = -4.5V Top View of SOP - 8 Super High Dense Cell Design(8) (7) (6) (5)D1 D1 D2 D2 Reliable and Rugged Lea
9.7. Size:263K anpec
apm4550k.pdf
APM4550KDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel30V/7A,RDS(ON) = 20m (typ.) @ VGS = 10VRDS(ON) = 30m (typ.) @ VGS = 4.5V P-ChannelTop View of SOP - 8-30V/-5A,RDS(ON) = 40m (typ.) @ VGS = -10V(7) (8)(3)RDS(ON) = 62m (typ.) @ VGS = -4.5VD1 D1 S2 Super High Dense Cell Design Reliable and Rugged(4) Lead Free Av
9.8. Size:224K anpec
apm4568j.pdf
APM4568JDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel40V/7.5A,RDS(ON) =21m (typ.) @ VGS = 10VRDS(ON) =30m (typ.) @ VGS = 4.5V P-ChannelTop View of PDIP - 8-40V/-6A,RDS(ON) =36m (typ.) @ VGS =-10V(8) (7) (3)RDS(ON) =50m (typ.) @ VGS =-4.5VD1 D1 S2 Super High Dense Cell Design Reliable and Rugged(4) Lead Free Availab
9.9. Size:187K anpec
apm4532k.pdf
APM4532KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelD1D1D230V/5A,D2RDS(ON) =35m(typ.) @ VGS = 10VS1RDS(ON) =60m(typ.) @ VGS = 4.5VG1S2G2 P-Channel-30V/-3.5A,Top View of SOP - 8RDS(ON) =85m(typ.) @ VGS =-10V(8) (7) (3)RDS(ON) =135m(typ.) @ VGS =-4.5VD1 D1 S2 Super High Dense C
9.10. Size:198K anpec
apm4538k.pdf
APM4538KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelD1D1D236V/5A,D2RDS(ON) =50m(typ.) @ VGS = 10VS1RDS(ON) =60m(typ.) @ VGS = 4.5VG1S2G2 P-Channel-36V/-4A,Top View of SOP - 8RDS(ON) =60m(typ.) @ VGS =-10V(3)RDS(ON) =80m(typ.) @ VGS =-4.5V (8) (7)S2D1 D1 Super High Dense Cel
9.11. Size:269K anpec
apm4548k.pdf
APM4548KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel 30V/7A, RDS(ON) = 18m (typ.) @ VGS = 10V RDS(ON) = 23m (typ.) @ VGS = 4.5V P-ChannelTop View of SOP - 8 -30V/-6A, RDS(ON) = 32m (typ.) @ VGS =-10V(3)(8) (7) RDS(ON) = 42m (typ.) @ VGS =-4.5VS2D1 D1 Super High Dense Cell Design Reliable and Rugged(4) Lead
9.12. Size:181K anpec
apm4542k.pdf
APM4542KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel D1D1D230V/7A,D2RDS(ON) =17m(typ.) @ VGS = 10VS1RDS(ON) =22m(typ.) @ VGS = 4.5VG1S2G2 P-ChannelTop View of SOP - 8-30V/-5.5A,RDS(ON) =35m(typ.) @ VGS =-10V(3)(8) (7)RDS(ON) =51m(typ.) @ VGS =-4.5VS2D1 D1 Super High Dense C
9.13. Size:264K anpec
apm4548ak.pdf
APM4548AKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel30V/7A,RDS(ON) = 18m (typ.) @ VGS = 10VRDS(ON) = 23m (typ.) @ VGS = 4.5V P-Channel-30V/-6A,Top View of SOP - 8RDS(ON) = 32m (typ.) @ VGS =-10VRDS(ON) = 42m (typ.) @ VGS =-4.5V(8) (7)(6) (5)D1 D1D2 D2 Super High Dense Cell Design Reliable and Rugged Lead Free a
9.14. Size:225K anpec
apm4568ak.pdf
APM4568AKDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D240V/6.5A,D2RDS(ON) = 20m (typ.) @ VGS = 10VS1RDS(ON) = 28m (typ.) @ VGS = 4.5VG1S2 P-ChannelG2-40V/-5A,Top View of SOP - 8RDS(ON) = 35m (typ.) @ VGS =-10VRDS(ON) = 48m (typ.) @ VGS =-4.5V(8) (7) (6) (5) Super High Dense Cell DesignD1 D1 D2 D2
9.15. Size:265K anpec
apm4588k.pdf
APM4588KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel60V/5A,RDS(ON) = 38m (typ.) @ VGS = 10VRDS(ON) = 55m (typ.) @ VGS = 4.5V P-Channel-60V/-3.5A,Top View of SOP - 8RDS(ON) = 80m (typ.) @ VGS =-10V(3)(8) (7)RDS(ON) = 100m (typ.) @ VGS =-4.5VS2D1 D1 Super High Dense Cell Design Reliable and Rugged(4) Lead Free A
9.16. Size:208K sino
apm4568ak.pdf
APM4568AK Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1D1 N-ChannelD2D240V/6.5A,RDS(ON) = 20m (typ.) @ VGS = 10VS1RDS(ON) = 28m (typ.) @ VGS = 4.5VG1S2G2 P-Channel-40V/-5A,Top View of SOP-8RDS(ON) = 35m (typ.) @ VGS =-10VRDS(ON) = 48m (typ.) @ VGS =-4.5V(8) (7) (6) (5) 100% UIS + Rg TestedD1 D1 D2 D2 Reliabl
9.17. Size:1667K cn vbsemi
apm4532kc.pdf
APM4532KCwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG
9.18. Size:1612K cn vbsemi
apm4550kc.pdf
APM4550KCwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG
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History: STF13N60M2
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