IRF7807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD 91747CIRF7807/IRF7807AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8 Top Viewbalance of on-resistanc

PD- 93761IRF7807D1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters Up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

PD-94079IRF7807VD2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

PD- 93762IRF7807D2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

PD-94078IRF7807VD1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

PD - 94707AIRF7807ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg(typ.)l Control FET for Notebook Processor Power13.8m:@VGS = 10V30V 7.2nCl Synchronous Rectifier MOSFET forGraphics Cards and POL Converters inNetworking and TelecommunicationSystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl

PD-94108IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction LossesA Low Switching Losses1 8S D2 7Description S DThis new device employs advanced HEXFET Power3 6S DMOSFET technology to achieve an unprecedented4 5balance of on-resistance and gate charge. TheG Dreduction of conduction and switching losses m

IRF7807TRPbF-1IRF7807ATRPbF-1HEXFET Chip-Set for DC-DC ConvertersAVDS 30 V1 8S DRDS(on) max 2 7S D25 m(@V = 4.5V)GS3 6S DQg (typical) 12 nC4 5G DID 8.3 A(@T = 25C) Top View SO-8AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co

IRF7807VTRPbF-1HEXFET Power MOSFETVDS 30 VA1 8S DRDS(on) max 25 m2 7(@V = 4.5V) S DGSQg (typical) 9.5 nC3 6S DID 4 58.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

PD - 95211BIRF7807ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg(typ.)l Control FET for Notebook Processor Power13.8m @VGS = 10V30V 7.2nCl Synchronous Rectifier MOSFET forGraphics Cards and POL Converters inNetworking and TelecommunicationSystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G D

IRF7807ATRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch