SM8403CSQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM8403CSQ
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6(4.2) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 60(67) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029(0.063) Ohm
   Paquete / Cubierta: DFN3X3C-8

Búsqueda de reemplazo de MOSFET SM8403CSQ

SM8403CSQ Datasheet (PDF)

..1. Size:273K sino
sm8403csq.pdf

SM8403CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel30V/5.6A,D2D1D2RDS(ON) = 29m (max.) @ VGS = 10V D1RDS(ON) = 39m (max.) @ VGS = 4.5VG2S2 P ChannelS1G1-30V/-4.2A, Top View of DFN3x3C-8RDS(ON) = 63m (max.) @ VGS =-10VRDS(ON) = 100m (max.) @ VGS =-4.5V(8) (7) (6) (5) 100% UIS + Rg TestedD1 D1 D2 D2 ESD Protection

9.1. Size:320K sino
sm8401csq.pdf

SM8401CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel (Integrated Schottky Diode)D230V/6.9A,D1D2D1RDS(ON) = 29m (max.) @ VGS = 10VRDS(ON) = 42m (max.) @ VGS = 4.5VG2S2S1G1RDS(ON) = 50m (max.) @ VGS = 4V P Channel Top View of DFN3x3C-8-30V/-5.9A,RDS(ON) = 40m (max.) @ VGS =-10VRDS(ON) = 60m (max.) @ VGS =-4.5V(8) (7) (

9.2. Size:294K sino
sm8404csqa.pdf

SM8404CSQADual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel Top View Bottom View30V/11A,D2D1D2RDS(ON) = 34.5m (max.) @ VGS = 10VD1RDS(ON) = 60m (max.) @ VGS = 4.5VG2Pin 1S2 P ChannelS1G1-30V/-13.3A,DFN3x3B-8_EP2RDS(ON) = 39m (max.) @ VGS =-10VRDS(ON) = 61m (max.) @ VGS =-4.5V(8) (7) (6) (5)D1 D1 D2 D2 100% UIS + Rg T

9.3. Size:268K sino
sm8404csq.pdf

SM8404CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel30V/5.2A,D2D1D2D1RDS(ON) = 34.5m (max.) @ VGS = 10VRDS(ON) = 60m (max.) @ VGS = 4.5V G2S2S1G1 P Channel Top View of DFN3x3C-8-30V/-5.2A,RDS(ON) = 39m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 61m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested Reliable and Ru

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: