IRF7811 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7811  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SO8

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IRF7811 datasheet

 ..1. Size:126K  international rectifier
 irf7809 irf7811.pdf pdf_icon

IRF7811

PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for Lower A A Electrical and Thermal Resistance 1 8 S D Low Conduction Losses 2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 0.1. Size:185K  international rectifier
 irf7811w.pdf pdf_icon

IRF7811

PD-94031D IRF7811W HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for RG 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resist

 0.2. Size:86K  international rectifier
 irf7811av.pdf pdf_icon

IRF7811

PD-94009 IRF7811AV IRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of

 0.3. Size:185K  international rectifier
 irf7811wpbf.pdf pdf_icon

IRF7811

PD- 95023C IRF7811WPbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for Rg 2 7 S D Lead-Free 3 6 S D 4 5 G D Description This new device employs advanced HEXFET Power SO-8 Top View MOSFET technology to achieve an u

MOSTRAR MÁS

Otros transistores... IRF7601, IRF7603, IRF7604, IRF7606, IRF7663, IRF7805, IRF7807, IRF7809, 4435, IRF820, IRF820A, IRF820AL, IRF820AS, IRF820FI, IRF820S, IRF821, IRF822