IPD06N03LA Todos los transistores

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 ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf

IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 5.7 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C

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 ipd06n03lbg.pdf

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 ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

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 ipd060n03lg .pdf

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 ipd068p03l3g 20.pdf

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 9.4. Size:501K  infineon
 ipd068n10n3g.pdf

IPD068N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 6.8 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq

 9.5. Size:634K  infineon
 ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 9.6. Size:1007K  infineon
 ipd060n03lg.pdf

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 9.7. Size:521K  infineon
 ipd060n03l.pdf

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

 9.8. Size:557K  infineon
 ipd068p03l3g.pdf

IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS -30 V single P-Channel in DPAK RDS(on),max VGS = 10V 6.8 mW Qualified according JEDEC1) for target applications VGS = 4.5V 11.0 175 C operating temperature ID ID -70 A 100% Avalanche tested Pb-free; RoHS compliant, halogen free applications power management PG-TO252-3

 9.9. Size:243K  inchange semiconductor
 ipd068n10n3.pdf

isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

 9.10. Size:247K  inchange semiconductor
 ipd068p03l3.pdf

isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 C operating junction temperature ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 9.11. Size:241K  inchange semiconductor
 ipd060n03l.pdf

isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga