APM2510NU
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM2510NU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 25
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 50
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5
V
Qgⓘ - Carga de la puerta: 24
nC
trⓘ - Tiempo de subida: 13
nS
Cossⓘ - Capacitancia
de salida: 230
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01
Ohm
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de MOSFET APM2510NU
APM2510NU
Datasheet (PDF)
..1. Size:168K anpec
apm2510nu.pdf
APM2510NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8.5m (typ.) @ VGS=10VG DRDS(ON)=15m (typ.) @ VGS=4.5VS Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Ch
8.1. Size:180K anpec
apm2513nu.pdf
APM2513NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/40A,RDS(ON)=10.5m (typ.) @ VGS=10VG DRDS(ON)=16m (typ.) @ VGS=4.5V Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Cha
8.2. Size:265K sino
apm2518nu.pdf
APM2518NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,DRDS(ON)=8m (Typ.) @ VGS=10VSRDS(ON)=15m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Markin
9.1. Size:168K anpec
apm2556nu.pdf
APM2556NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (typ.) @ VGS=10VG DRDS(ON)=7.5m (typ.) @ VGS=4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Channel MOSFET
9.2. Size:200K anpec
apm2509nu.pdf
APM2509NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A , RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC ConvertersSN-Channel MOSFETOrderi
9.3. Size:265K sino
apm2558nu.pdf
APM2558NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,DRDS(ON)=4.5m (Typ.) @ VGS=10VSRDS(ON)=7.5m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar
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