IRF820AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF820AL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 17(max) nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO262

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IRF820AL Datasheet (PDF)

..1. Size:291K international rectifier
irf820aspbf irf820alpbf.pdf

PD - 95533IRF820ASPbFSMPS MOSFET IRF820ALPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 3.0 2.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg Results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance

..2. Size:133K international rectifier
irf820al.pdf

PD- 93774AIRF820ASSMPS MOSFET IRF820ALHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andTO-262D2PakAval

7.1. Size:133K international rectifier
irf820as.pdf

7.2. Size:196K international rectifier
irf820a.pdf

PD - 94978SMPS MOSFETIRF820APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 3.0 2.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche

7.3. Size:917K samsung
irf820a.pdf

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

7.4. Size:204K vishay
irf820aspbf sihf820al sihf820as.pdf

IRF820AS, SiHF820AS, IRF820AL, SiHF820ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 4.3RuggednessQgd (nC) 8.5 Fully Characterize

7.5. Size:204K vishay
irf820a sihf820a.pdf

IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti

Otros transistores... IRF7606 , IRF7663 , IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRF820A , AON7506 , IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 .

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