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2SK3435 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3435
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 84 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1200 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO220AB
 

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2SK3435 PDF Specs

 ..1. Size:46K  nec
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2SK3435

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3435 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3435 TO-220AB 2SK3435-S TO-262 FEATURES 2SK3435-Z TO-220SMD Super low on-state resistance RDS(on)1 = 14 m ... See More ⇒

 ..2. Size:288K  inchange semiconductor
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2SK3435

isc N-Channel MOSFET Transistor 2SK3435 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 0.1. Size:206K  renesas
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2SK3435

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:357K  inchange semiconductor
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2SK3435

isc N-Channel MOSFET Transistor 2SK3435-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

Otros transistores... IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , MDF11N65B , MMIS60R580P , SPP20N60C3 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N , B3942 , CEB51A3 , CEP51A3 , CS4145 .

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