2SK3435 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3435  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1200 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO220AB

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SK3435 MOSFET

- Selecciónⓘ de transistores por parámetros

 

2SK3435 datasheet

 ..1. Size:46K  nec
 2sk3435.pdf pdf_icon

2SK3435

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3435 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3435 TO-220AB 2SK3435-S TO-262 FEATURES 2SK3435-Z TO-220SMD Super low on-state resistance RDS(on)1 = 14 m

 ..2. Size:288K  inchange semiconductor
 2sk3435.pdf pdf_icon

2SK3435

isc N-Channel MOSFET Transistor 2SK3435 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.1. Size:206K  renesas
 2sk3435-s-z-zj.pdf pdf_icon

2SK3435

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:357K  inchange semiconductor
 2sk3435-z.pdf pdf_icon

2SK3435

isc N-Channel MOSFET Transistor 2SK3435-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

MOSTRAR MÁS

Otros transistores... IXFT50N50P3, IXFQ50N50P3, IXFH50N50P3, APM2510NU, IRF7832Z, 2SK2222, MDF11N65B, MMIS60R580P, IRFP260, 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, CEP51A3, CS4145