FDD6035AL Todos los transistores

July 2003 FDD6035AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 V Semiconductor s advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge s

FDD6035AL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL

isc N-Channel MOSFET Transistor FDD6035AL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 42 A, 30 V R = 16 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 22 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for

August 2003 FDD6030L 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 12 A, 30 V RDS(ON) = 14.5 m @ VGS = 10 V Semiconductor s advanced PowerTrench process that RDS(ON) = 21 m @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low gate charge

July 1999 FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power 33 A, 30 V. RDS(ON) = 0.023 @ VGS = 10 V field effect transistor is produced using Fairchild s RDS(ON) = 0.037 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is tai

isc N-Channel MOSFET Transistor FDD6030L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor FDD603AL FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor FDD6030BL FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos