IRF820FI Datasheet. Equivalente

 ..1. Size:212K  inchange semiconductor
 irf820fi.pdf

isc N-Channel Mosfet Transistor IRF820FI FEATURES Low R = 2.5 (TYP) DS(on) Lower Input Capacitance Improved Gate Charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current , high speed switching Switching mode power supplies DC-DC & DC-AC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:2090K  international rectifier
 irf820pbf.pdf

PD - 94979 IRF820PbF Lead-Free 02/03/04 Document Number 91059 www.vishay.com 1 IRF820PbF Document Number 91059 www.vishay.com 2 IRF820PbF Document Number 91059 www.vishay.com 3 IRF820PbF Document Number 91059 www.vishay.com 4 IRF820PbF Document Number 91059 www.vishay.com 5 IRF820PbF Document Number 91059 www.vishay.com 6 IRF820PbF TO-220AB Package Outline

 8.2. Size:133K  international rectifier
 irf820as.pdf

PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Aval

 8.3. Size:318K  international rectifier
 irf820s.pdf

PD - 95548 IRF820SPbF Lead-Free 7/22/04 Document Number 91060 www.vishay.com 1 IRF820SPbF Document Number 91060 www.vishay.com 2 IRF820SPbF Document Number 91060 www.vishay.com 3 IRF820SPbF Document Number 91060 www.vishay.com 4 IRF820SPbF Document Number 91060 www.vishay.com 5 IRF820SPbF Document Number 91060 www.vishay.com 6 IRF820SPbF Peak Diode Recovery

 8.4. Size:196K  international rectifier
 irf820a.pdf

PD - 94978 SMPS MOSFET IRF820APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 8.5. Size:169K  international rectifier
 irf820.pdf

 8.6. Size:291K  international rectifier
 irf820aspbf irf820alpbf.pdf

PD - 95533 IRF820ASPbF SMPS MOSFET IRF820ALPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance

 8.7. Size:133K  international rectifier
 irf820al.pdf

PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Aval

 8.8. Size:296K  st
 irf820.pdf

IRF820 N-channel 500V - 2.5 - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS(on) ID IRF820 500V

 8.9. Size:478K  st
 irf820 irf821 irf822 irf823-fi.pdf

 8.10. Size:866K  fairchild semi
 irf820b irfs820b.pdf

 8.11. Size:917K  samsung
 irf820a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 8.12. Size:200K  vishay
 irf820 sihf820.pdf

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR

 8.13. Size:200K  vishay
 irf820spbf sihf820s.pdf

IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 500 Surface Mount RDS(on) ( )VGS = 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 24 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Simple Drive Re

 8.14. Size:174K  vishay
 irf820l irf820lpbf sihf820l.pdf

IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 500 Available in tape and reel RDS(on) ( )VGS = 10 V 3.0 Available Dynamic dV/dt rating Qg (Max.) (nC) 24 Repetitive avalanche rated Qgs (nC) 3.3 Available Fast switching Qgd (nC) 13 Ease of paralleling Configuration Singl

 8.15. Size:204K  vishay
 irf820aspbf sihf820al sihf820as.pdf

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 4.3 Ruggedness Qgd (nC) 8.5 Fully Characterize

 8.16. Size:204K  vishay
 irf820a sihf820a.pdf

IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Qg (Max.) (nC) 17 Ruggedness Qgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltage and current Qgd (nC) 8.5 Effecti

 8.17. Size:201K  vishay
 irf820pbf sihf820.pdf

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR

 8.18. Size:151K  infineon
 irf820 sihf820.pdf

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR

 8.19. Size:229K  inchange semiconductor
 irf820.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF820 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 3 (Max) DS(on) Fast Switching Speed Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current