HFP13N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFP13N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.3 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HFP13N10 MOSFET
HFP13N10 Datasheet (PDF)
hfp13n10.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
hfp13n50.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
hfp13n50s.pdf

March 2014BVDSS = 500 VRDS(on) typ HFP13N50SID = 13 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area L
hfp13n60u.pdf

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFP13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area
Otros transistores... HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , HFH9N90 , 5N50 , HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 , HFP4N65 .
History: IRFIZ34GPBF | IRF7704 | BL15N25-A | G12P10K | FQPF12N60CT | 5N60L-TM3-T | IRFPE20
History: IRFIZ34GPBF | IRF7704 | BL15N25-A | G12P10K | FQPF12N60CT | 5N60L-TM3-T | IRFPE20



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