HFP13N10 Todos los transistores

 

HFP13N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP13N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.3 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220
 

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HFP13N10 Datasheet (PDF)

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HFP13N10

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

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HFP13N10

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 8.2. Size:165K  semihow
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HFP13N10

March 2014BVDSS = 500 VRDS(on) typ HFP13N50SID = 13 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area L

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 hfp13n60u.pdf pdf_icon

HFP13N10

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFP13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , HFH9N90 , 5N50 , HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 , HFP4N65 .

History: IRFIZ34GPBF | IRF7704 | BL15N25-A | G12P10K | FQPF12N60CT | 5N60L-TM3-T | IRFPE20

 

 
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