HFP13N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFP13N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 195 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 13 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 100 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia drenaje-fuente RDS(on): 0.48 Ohm
Empaquetado / Estuche: TO220
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HFP13N50 Datasheet (PDF)
1.1. hfp13n50u.pdf 
Size:163K _update_mosfet
Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFP13N50U ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Low
1.2. hfp13n50s.pdf Size:165K _update_mosfet
March 2014 BVDSS = 500 V RDS(on) typ HFP13N50S ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area L
1.3. hfp13n50.pdf Size:500K _shantou-huashan
Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
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