HFP4N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFP4N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 100 W
Tensión drenaje-fuente (Vds): 650 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 45 nS
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia drenaje-fuente RDS(on): 2.9 Ohm
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de MOSFET HFP4N65
HFP4N65 Datasheet (PDF)
1.1. hfp4n65.pdf 
Size:818K _shantou-huashan
Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
4.1. hfp4n60.pdf Size:208K _shantou-huashan
N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation（Tc=25℃）
5.1. hfp4n50.pdf Size:239K _update_mosfet
July 2005 BVDSS = 500 V RDS(on) typ HFP4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON
5.2. hfp4n90.pdf Size:202K _update_mosfet
March 2014 BVDSS = 900 V RDS(on) typ HFP4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Low
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
