HFP4N65 Todos los transistores

 

HFP4N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP4N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 2.9 Ohm

Empaquetado / Estuche: TO220

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HFP4N65 Datasheet (PDF)

1.1. hfp4n65.pdf Size:818K _shantou-huashan

HFP4N65
HFP4N65

 Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

4.1. hfp4n60.pdf Size:208K _shantou-huashan

HFP4N65
HFP4N65

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

 5.1. hfp4n90.pdf Size:202K _update_mosfet

HFP4N65
HFP4N65

March 2014 BVDSS = 900 V RDS(on) typ HFP4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Low

5.2. hfp4n50.pdf Size:239K _update_mosfet

HFP4N65
HFP4N65

July 2005 BVDSS = 500 V RDS(on) typ HFP4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

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