HFP5N80 Todos los transistores

 

HFP5N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP5N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 95 pF

Resistencia drenaje-fuente RDS(on): 2.6 Ohm

Empaquetado / Estuche: TO220

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HFP5N80 Datasheet (PDF)

1.1. hfp5n80.pdf Size:660K _shantou-huashan

HFP5N80
HFP5N80

 Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

5.1. hfp5n70s.pdf Size:174K _update_mosfet

HFP5N80
HFP5N80

Aug 2012 BVDSS = 700 V RDS(on) typ = 2.7 HFP5N70S ID = 4.0 A 700V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Low

5.2. hfp5n50s.pdf Size:203K _update_mosfet

HFP5N80
HFP5N80

OCT 2008 BVDSS = 500 V RDS(on) typ HFP5N50S ID = 5.0 A 500V N-Channel MOSFET TO-220 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RD

 5.3. hfp5n60s.pdf Size:172K _update_mosfet

HFP5N80
HFP5N80

Aug 2007 BVDSS = 600 V RDS(on) typ HFP5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(

5.4. hfp5n65s.pdf Size:207K _update_mosfet

HFP5N80
HFP5N80

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFP5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

 5.5. hfp5n50u.pdf Size:203K _update_mosfet

HFP5N80
HFP5N80

May 2012 BVDSS = 500 V RDS(on) typ HFP5N50U ID = 5.0 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Low

5.6. hfp5n60u.pdf Size:205K _update_mosfet

HFP5N80
HFP5N80

May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area L

5.7. hfp5n65u.pdf Size:204K _update_mosfet

HFP5N80
HFP5N80

March 2013 BVDSS = 650 V RDS(on) typ HFP5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

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