HFP5N80 Todos los transistores

Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc... See More ⇒

March 2013 BVDSS = 650 V RDS(on) typ HFP5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Oct 2016 HFP5N60F / HFS5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFP5N60F HFS5N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unle... See More ⇒

Aug 2012 BVDSS = 700 V RDS(on) typ = 2.7 HFP5N70S ID = 4.0 A 700V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area Low... See More ⇒

May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area L... See More ⇒

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFP5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Unrivalled Gate Charge 10 5 nC (Typ ) ... See More ⇒

OCT 2008 BVDSS = 500 V RDS(on) typ HFP5N50S ID = 5.0 A 500V N-Channel MOSFET TO-220 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Extended Safe Operating Area Lower RD... See More ⇒

May 2012 BVDSS = 500 V RDS(on) typ HFP5N50U ID = 5.0 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Low... See More ⇒

Aug 2007 BVDSS = 600 V RDS(on) typ HFP5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒