HFP5N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFP5N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 140 W
Tensión drenaje-fuente (Vds): 800 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 4.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 60 nS
Conductancia de drenaje-sustrato (Cd): 95 pF
Resistencia drenaje-fuente RDS(on): 2.6 Ohm
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de MOSFET HFP5N80
HFP5N80 Datasheet (PDF)
1.1. hfp5n80.pdf 
Size:660K _shantou-huashan
Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc
5.1. hfp5n65s.pdf Size:207K _update_mosfet
Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFP5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )
5.2. hfp5n50u.pdf Size:203K _update_mosfet
May 2012 BVDSS = 500 V RDS(on) typ HFP5N50U ID = 5.0 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Low
5.3. hfp5n65u.pdf Size:204K _update_mosfet
March 2013 BVDSS = 650 V RDS(on) typ HFP5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
5.4. hfp5n60u.pdf Size:205K _update_mosfet
May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area L
5.5. hfp5n70s.pdf Size:174K _update_mosfet
Aug 2012 BVDSS = 700 V RDS(on) typ = 2.7 HFP5N70S ID = 4.0 A 700V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Low
5.6. hfp5n60s.pdf Size:172K _update_mosfet
Aug 2007 BVDSS = 600 V RDS(on) typ HFP5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(
5.7. hfp5n50s.pdf Size:203K _update_mosfet
OCT 2008 BVDSS = 500 V RDS(on) typ HFP5N50S ID = 5.0 A 500V N-Channel MOSFET TO-220 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RD
Otros transistores... HFP17N10 , HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 , HFP4N65 , HFP50N06 , HFP50N06V , IRF540N , HFP60N06 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 , HFP740 , HFP75N08 .
