HFP730 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP730  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 73 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220

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HFP730 datasheet

 ..1. Size:340K  shantou-huashan
 hfp730.pdf pdf_icon

HFP730

Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3

 0.1. Size:202K  semihow
 hfp730u.pdf pdf_icon

HFP730

Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 HFP730U ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lowe

 0.2. Size:404K  semihow
 hfp730f hfs730f.pdf pdf_icon

HFP730

Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 400 V Very Low Intrinsic Capacitances ID 6A Excellent Switching Characteristics RDS(on), Typ 0.8 100% Avalanche Tested Qg, Typ 13 nC RoHS Compliant HFP730F HFS730F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unless oth

 0.3. Size:299K  semihow
 hfp730s.pdf pdf_icon

HFP730

Nov 2013 BVDSS = 400 V RDS(on) typ HFP730S ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area Lowe

MOSTRAR MÁS

Otros transistores... HFP50N06, HFP50N06V, HFP5N80, HFP60N06, HFP630, HFP640, HFP70N03V, HFP70N06, IRF640N, HFP740, HFP75N08, HFP75N80C, HFP7N60, HFP7N80, HFP80N75, HFP830, HFP840