HFP730 Todos los transistores

 

HFP730 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP730
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO220
 

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HFP730 PDF Specs

 ..1. Size:340K  shantou-huashan
hfp730.pdf pdf_icon

HFP730

Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3... See More ⇒

 0.1. Size:202K  semihow
hfp730u.pdf pdf_icon

HFP730

Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 HFP730U ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

 0.2. Size:404K  semihow
hfp730f hfs730f.pdf pdf_icon

HFP730

Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 400 V Very Low Intrinsic Capacitances ID 6A Excellent Switching Characteristics RDS(on), Typ 0.8 100% Avalanche Tested Qg, Typ 13 nC RoHS Compliant HFP730F HFS730F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unless oth... See More ⇒

 0.3. Size:299K  semihow
hfp730s.pdf pdf_icon

HFP730

Nov 2013 BVDSS = 400 V RDS(on) typ HFP730S ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 17 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

Otros transistores... HFP50N06 , HFP50N06V , HFP5N80 , HFP60N06 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , IRF640N , HFP740 , HFP75N08 , HFP75N80C , HFP7N60 , HFP7N80 , HFP80N75 , HFP830 , HFP840 .

 

 
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