IRF830AS Todos los transistores

 

IRF830AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF830AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET IRF830AS

 

IRF830AS Datasheet (PDF)

 ..1. Size:155K  international rectifier
irf830as.pdf pdf_icon

IRF830AS

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 ..2. Size:676K  international rectifier
irf830aspbf irf830alpbf.pdf pdf_icon

IRF830AS

PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Vol

 ..3. Size:207K  vishay
irf830alpbf irf830aspbf sihf830al sihf830as.pdf pdf_icon

IRF830AS

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 24 Requirement Qgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterize

 0.1. Size:880K  cn vbsemi
irf830astrl.pdf pdf_icon

IRF830AS

IRF830ASTRL www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd

Otros transistores... IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 , IRF830A , IRF830AL , RFP50N06 , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , IRF840 , 2SK2209-01R .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q | AP25N06K | AP2335 | AP2318A | AP2317SD | AP2317QD | AP2317A | AP2316 | AP2310 | AP2301B | AP20P30S

 

 

 
Back to Top

 

Popular searches

2sc485 | 2sd287 | 2sd438 | a1492 | hy4008 | ncep039n10m | 20n50 | 2sc869

 


 
.